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FDMS3500 데이터시트 PDF




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부품번호 FDMS3500 기능
기능 MOSFET ( Transistor )
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FDMS3500 데이터시트, 핀배열, 회로
October 2014
FDMS3500
N-Channel Power Trench® MOSFET
75V, 49A, 14.5m:
tm
Features
General Description
„ Max rDS(on) = 14.5m: at VGS = 10V, ID = 11.5A
„ Max rDS(on) = 16.3m: at VGS = 4.5V, ID = 10A
„ Advanced Package and Silicon combination for low rDS(on)
„ MSL1 robust package design
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
„ 100% UIL Tested
Application
„ RoHS Compliant
„ DC - DC Conversion
Top Bottom
Pin 1
S
S
S
G
D
D
D
D
Power 56
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
75
±20
49
57
9.2
100
384
96
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.3
50
°C/W
Device Marking
FDMS3500
Device
FDMS3500
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMS3500 Rev.C2
1
www.fairchildsemi.com




FDMS3500 pdf, 반도체, 판매, 대치품
Typical Characteristics TJ = 25°C unless otherwise noted
10
ID = 11.5A
8
VDD = 40V
6
VDD = 30V
VDD = 50V
4
10000
1000
Ciss
Coss
2
0
0 10 20 30 40 50 60 70
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
100
f = 1MHz
VGS = 0V
30
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
75
Figure8. Capacitancevs Drain
to Source Voltage
20
10
TJ = 25oC
TJ = 125oC
1
0.01
0.1 1 10
tAV, TIME IN AVALANCHE(ms)
100 400
Figure9. Unclamped Inductive
Switching Capability
60
50
40
Limited by Package
30
20
VGS = 10V
VGS = 4.5V
10
0
25
RTJC = 1.3oC/W
50 75 100 125
TC, CASE TEMPERATURE (oC)
150
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
400
THIS AREA IS
100 LIMITED BY rDS(on)
10 1ms
1
0.1
0.01
0.01
10ms
SINGLE PULSE
TJ = MAX RATED
RTJA = 125oC/W
TA = 25oC
100ms
1s
10s
DC
0.1 1 10 100 300
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
1000
100
VGS = 10V
SINGLE PULSE
RTJA = 125oC/W
TA = 25oC
10
1
0.5
10-3
10-2
10-1
1
10
t, PULSE WIDTH (sec)
100
Figure 12. Single Pulse Maximum
Power Dissipation
1000
©2009 Fairchild Semiconductor Corporation
FDMS3500 Rev.C2
4
www.fairchildsemi.com

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FDMS3500 전자부품, 판매, 대치품
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