|
|
Datasheet FDPC8012S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FDPC8012S | MOSFET, Transistor FDPC8012S PowerTrench® Power Clip
October 2014
FDPC8012S
PowerTrench® Power Clip 25V Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel Max rDS(on) = 7.0 mΩ at VGS = 4.5 V, ID = 12 A Q2: N-Channel Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 23 A Low inductance packaging shortens r |  Fairchild Semiconductor | mosfet |
FDP Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FDP020N06B | N-Channel PowerTrench MOSFET FDP020N06B — N-Channel PowerTrench® MOSFET
FDP020N06B
N-Channel PowerTrench® MOSFET
60 V, 313 A, 2 mΩ
November 2013
Features
• RDS(on) = 1.65 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 194 nC • Soft Reverse-Recovery Body Diode • Fairchild Semiconductor mosfet | | |
| 2 | FDP023N08B | MOSFET, Transistor FDP023N08B — N-Channel PowerTrench® MOSFET
FDP023N08B
N-Channel PowerTrench® MOSFET
75 V, 242 A, 2.35 mΩ
November 2013
Features
• RDS(on) = 1.96 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A • Low FOM RDS(on)*QG • Low Reverse Recovery Charge, Qrr • Soft Reverse Recovery Body Diode • Enables Fairchild Semiconductor mosfet | | |
| 3 | FDP025N06 | MOSFET, Transistor FDP025N06 — N-Channel PowerTrench® MOSFET
FDP025N06
N-Channel PowerTrench® MOSFET
60 V, 265 A, 2.5 mΩ
November 2013
Features
• RDS(on) = 1.9 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low
RDS(on) • Fairchild Semiconductor mosfet | | |
| 4 | FDP027N08B | N-Channel PowerTrench MOSFET FDP027N08B — N-Channel PowerTrench® MOSFET
FDP027N08B
N-Channel PowerTrench® MOSFET
80 V, 223 A, 2.7 mΩ
November 2013
Features
• RDS(on) = 2.21 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 112 nC • Soft Reverse-Recovery Body Diode � Fairchild Semiconductor mosfet | | |
| 5 | FDP030N06 | MOSFET, Transistor FDP030N06 — N-Channel PowerTrench® MOSFET
FDP030N06
N-Channel PowerTrench® MOSFET
60 V, 193 A, 3.2 mΩ
November 2013
Features
• RDS(on) = 2.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low
RDS(on) • Fairchild Semiconductor mosfet | | |
| 6 | FDP030N06B_F102 | MOSFET, Transistor FDP030N06B_F102 — N-Channel PowerTrench® MOSFET
FDP030N06B_F102
N-Channel PowerTrench® MOSFET
60 V, 195 A, 3.1 mΩ
November 2013
Features
• RDS(on) = 2.67 mΩ (Typ.) @ VGS = 10 V, ID = 100 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 78 nC • Soft Reverse-Recovery Body Fairchild Semiconductor mosfet | | |
| 7 | FDP032N08 | MOSFET, Transistor FDP032N08 — N-Channel PowerTrench® MOSFET
FDP032N08
N-Channel PowerTrench® MOSFET
75 V, 235 A, 3.2 mΩ
November 2013
Features
• RDS(on) = 2.5 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low
RDS(on) • Fairchild Semiconductor mosfet | |
| Esta página es del resultado de búsqueda del FDPC8012S. Si pulsa el resultado de búsqueda de FDPC8012S se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |