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FDPC8013S 데이터시트 PDF




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기능 MOSFET ( Transistor )
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FDPC8013S 데이터시트, 핀배열, 회로
October 2014
FDPC8013S
PowerTrench® Power Clip
30 V Asymmetric Dual N-Channel MOSFET
Features
General Description
Q1: N-Channel
„ Max rDS(on) = 9.6 mΩ at VGS = 4.5 V, ID = 10 A
Q2: N-Channel
„ Max rDS(on) = 2.7 mΩ at VGS = 4.5 V, ID = 22 A
„ Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
„ MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing
„ RoHS Compliant
This device includes two specialized N-Channel MOSFETs in a
dual package. The switch node has been internally connected to
enable easy placement and routing of synchronous buck
converters. The control MOSFET (Q1) and synchronous
SyncFETTM (Q2) have been designed to provide optimal power
efficiency.
Applications
„ Computing
„ Communications
„ General Purpose Point of Load
Pin 1
Top
V+
LS
Pin 1
GND
GND
V+
(HSD
HSG
GND
(LSS
HSG SW
SW
SW
SW
SW
3.3 mm x 3.3 mm
Bottom
SW
PAD9
V+(HSD)
PAD10
GND(LSS)
V+ HSG
LSG SW
GND SW
GND SW
SW
V+
LSG
GND
GND
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
TC = 25 °C
TA = 25 °C
(Note 3)
TA = 25 °C
TA = 25 °C
Q1 Q2
30 30
±20 ±20
20
131a
55
261b
40 100
21
1.61a
0.81c
97
2.01b
0.91d
-55 to +150
Units
V
V
A
mJ
W
°C
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
771a
1511c
5.0
631b
1351d
3.5
°C/W
Device Marking
13CF/15CF
Device
FDPC8013S
Package
Power Clip 33
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDPC8013S Rev.C2
1
www.fairchildsemi.com




FDPC8013S pdf, 반도체, 판매, 대치품
Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
40
VGS = 10 V
VGS = 6 V
30 VGS = 4.5 V
VGS = 3.5 V
20
VGS = 3 V
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0 0.3 0.6 0.9 1.2 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
4.0
VGS = 3 V
3.5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
3.0
2.5 VGS = 3.5 V
2.0
VGS = 4.5 V
1.5
1.0
0.5
0
VGS = 6 V VGS = 10 V
10 20
ID, DRAIN CURRENT (A)
30
40
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 13 A
VGS = 10 V
1.4
35
ID = 13 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
28
1.2 21
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
14
TJ = 125 oC
7
TJ = 25 oC
0
2 3 4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
40
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
30 VDS = 5 V
40
VGS = 0 V
10
20
10
0
1.0
TJ = 150 oC
TJ = 25 oC
TJ = -55 oC
1.5 2.0 2.5 3.0
VGS, GATE TO SOURCE VOLTAGE (V)
3.5
Figure 5. Transfer Characteristics
1 TJ = 150 oC
0.1
TJ = 25 oC
TJ = -55 oC
0.01
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2012 Fairchild Semiconductor Corporation
FDPC8013S Rev.C2
4
www.fairchildsemi.com

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FDPC8013S 전자부품, 판매, 대치품
Typical Characteristics (Q2 N-Channel) TJ = 25 oC unlenss otherwise noted
100
VGS = 10 V
80 VGS = 6 V
VGS = 4.5 V
60 VGS = 3.5 V
40
VGS = 3 V
20
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0 0.2 0.4 0.6 0.8 1.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 14. On-Region Characteristics
6
PULSE DURATION = 80 μs
5
VGS = 3 V
DUTY CYCLE = 0.5% MAX
4
3 VGS = 3.5 V
VGS = 4.5 V
2
1
VGS = 6 V
VGS = 10 V
0
0 20 40 60 80 100
ID, DRAIN CURRENT (A)
Figure 15. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.6
ID = 26 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 16. Normalized On-Resistance
vs Junction Temperature
7
PULSE DURATION = 80 μs
6 DUTY CYCLE = 0.5% MAX
5 ID = 26 A
4
3
TJ = 125 oC
2
1
TJ = 25 oC
0
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs Gate to
Source Voltage
100
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
80 VDS = 5 V
60
40
20
0
1.0
TJ = 125 oC
TJ = 25 oC
TJ = -55 oC
1.5 2.0 2.5 3.0
VGS, GATE TO SOURCE VOLTAGE (V)
3.5
Figure 18. Transfer Characteristics
100
VGS = 0 V
10
TJ = 125 oC
1
0.1
0.01
TJ = 25 oC
TJ = -55 oC
0.001
0.0 0.2 0.4 0.6 0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 19. Source to Drain Diode
Forward Voltage vs Source Current
1.0
©2012 Fairchild Semiconductor Corporation
FDPC8013S Rev.C2
7
www.fairchildsemi.com

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