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A4S12D30FTP

A4S12D40FTP

512M Double Data Rate Synchronous DRAM

512Mb DDR SDRAM Specification

A4S12D30FTP

A4S12D40FTP

Zentel Electronics Corp.

Revision 1.2

May, 2011

BLOCK DIAGRAM

A4S12D40FTP

DLL

A4S12D30FTP

A4S12D40FTP

512M Double Data Rate Synchronous DRAM

DQ0 - 15

UDQS,LDQS

I/O Buffer

DQS Buffer

Memory

Array

Bank #0

Memory

Array

Bank #1

Memory

Array

Bank #2

Memory

Array

Bank #3

Mode Register

Control Circuitry

Address Buffer

A0-12 BA0,1

Clock Buffer

Control Signal Buffer

/CS /RAS /CAS /WE LDM

CLK /CLK CKE

UDM

Type Designation Code

This rule is applied to only Synchronous DRAM family.

A 4 S 12 D 4 0 F T P –G5

Speed Grade 5: 200MHz @CL=3.0

Package Type TP: TSOP(II)

Process Generation

Function Reserved for Future Use

Organization 2 n 3: x8, 4: x16

DDR Synchronous DRAM

Density 12: 512M bits

Interface S:SSTL _2

Memory Style (DRAM)

Zentel DRAM

Revision 1.2

Page 3 / 37

May, 2011

A4S12D30FTP

A4S12D40FTP

512M Double Data Rate Synchronous DRAM

BASIC FUNCTIONS

The 512Mb DDR SDRAM provides basic functions, bank (row) activate, burst read / write, bank

(row) precharge, and auto / self refresh. Each command is defined by control signals of /RAS,

/CAS and /WE at CLK rising edge. In addition to 3 signals, /CS ,CKE and A10 are used as chip

select, refresh option, and precharge option, respectively. To know the detailed definition of

commands, please see the command truth table.

/CLK

CLK

/CS

Chip Select : L=select, H=deselect

/RAS

Command

/CAS

Command

define basic commands

/WE

Command

CKE

Refresh Option @refresh command

A10 Precharge Option @precharge or read/write command

Activate (ACT) [/RAS =L, /CAS =/WE =H]

ACT command activates a row in an idle bank indicated by BA.

Read (READ) [/RAS =H, /CAS =L, /WE =H]

READ command starts burst read from the active bank indicated by BA. First output data appears after

/CAS latency. When A10 =H at this command, the bank is deactivated after the burst read (auto-

precharge, READA)

Write (WRITE) [/RAS =H, /CAS =/WE =L]

WRITE command starts burst write to the active bank indicated by BA. Total data length to be written

is set by burst length. When A10 =H at this command, the bank is deactivated after the burst write

(auto-precharge, WRITEA)

Precharge (PRE) [/RAS =L, /CAS =H, /WE =L]

PRE command deactivates the active bank indicated by BA. This command also terminates burst read

/write operation. When A10 =H at this command, all banks are deactivated (precharge all, PREA ).

Auto-Refresh (REFA) [/RAS =/CAS =L, /WE =CKE =H]

REFA command starts auto-refresh cycle. Refresh address including bank address are generated

internally. After this command, the banks are precharged automatically.

Revision 1.2

Page 6 / 37

May, 2011