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PDF FGB3440G2_F085 Data sheet ( Hoja de datos )
| Número de pieza | FGB3440G2_F085 | |
| Descripción | N-Channel Ignition IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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May 2014
FGB3440G2_F085 / FGD3440G2_F085
FGP3440G2_F085
EcoSPARK®2 335mJ, 400V, N-Channel Ignition IGBT
Features
SCIS Energy = 335mJ at TJ = 25oC
Logic Level Gate Drive
Applications
Automotive lgnition Coil Driver Circuits
Coil On Plug Applications
Qualified to AEC Q101
RoHS Compliant
Package
JEDEC TO-263AB
D²-Pak
JEDEC TO-220AB
EC
G
Symbol
G
E
JEDEC TO-252AA
D-Pak
GATE
G
COLLECTOR
E (FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
BVCER Collector to Emitter Breakdown Voltage (IC = 1mA)
BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA)
ESCIS25 Self Clamping Inductive Switching Energy (Note 1)
ESCIS150 Self Clamping Inductive Switching Energy (Note 2)
IC25 Collector Current Continuous, at VGE = 4.0V, TC = 25°C
IC110
Collector Current Continuous, at VGE = 4.0V, TC = 110°C
VGEM Gate to Emitter Voltage Continuous
PD
Power Dissipation Total, at TC = 25°C
Power Dissipation Derating, for TC > 25oC
TJ Operating Junction Temperature Range
TSTG Storage Junction Temperature Range
TL Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s)
TPKG Max. Lead Temp. for Soldering (Package Body for 10s)
ESD Electrostatic Discharge Voltage at100pF, 1500Ω
@2014 Fairchild Semiconductor Corporation
1
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
COLLECTOR
R1
R2
EMITTER
Ratings
400
28
335
195
26.9
25
±10
166
1.1
-40 to +175
-40 to +175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/oC
oC
oC
oC
oC
kV
www.fairchildsemi.com
1 page  
Typical Performance Curves (Continued)
30
VGE = 8.0V
VGE = 5.0V
VGE = 4.5V
20
VGE = 4.0V
VGE = 3.7V
10
TJ = 175oC
0
01234
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage
vs. Collector Current
30
VGE = 4.0V
20
10
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE(oC)
Figure 9. DC Collector Current vs. Case
Temperature
10000
1000
VECS = 24V
100
10
VCES = 300V
1
0.1
-50
VCES = 250V
-25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 11. Leakage Current vs. Junction
Temperature
30
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VCE = 5V
20
10 TJ = 175oC
TJ = 25oC
TJ = -40oC
0
123
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 8. Transfer Characteristics
4
2.0
VCE = VGE
ICE = 1mA
1.8
1.6
1.4
1.2
1.0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE(oC)
Figure 10. Threshold Voltage vs. Junction
Temperature
12
ICE = 6.5A, VGE = 5V, RG = 1KΩ
10
Resistive tOFF
8 Inductive tOFF
6
4
2 Resistive tON
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 12. Switching Time vs. Junction
Temperature
@2014 Fairchild Semiconductor Corporation
5
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGB3440G2_F085.PDF ] | |
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