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부품번호 | FGP3440G2_F085 기능 |
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기능 | N-Channel Ignition IGBT | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 9 페이지수
May 2014
FGB3440G2_F085 / FGD3440G2_F085
FGP3440G2_F085
EcoSPARK®2 335mJ, 400V, N-Channel Ignition IGBT
Features
SCIS Energy = 335mJ at TJ = 25oC
Logic Level Gate Drive
Applications
Automotive lgnition Coil Driver Circuits
Coil On Plug Applications
Qualified to AEC Q101
RoHS Compliant
Package
JEDEC TO-263AB
D²-Pak
JEDEC TO-220AB
EC
G
Symbol
G
E
JEDEC TO-252AA
D-Pak
GATE
G
COLLECTOR
E (FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
BVCER Collector to Emitter Breakdown Voltage (IC = 1mA)
BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA)
ESCIS25 Self Clamping Inductive Switching Energy (Note 1)
ESCIS150 Self Clamping Inductive Switching Energy (Note 2)
IC25 Collector Current Continuous, at VGE = 4.0V, TC = 25°C
IC110
Collector Current Continuous, at VGE = 4.0V, TC = 110°C
VGEM Gate to Emitter Voltage Continuous
PD
Power Dissipation Total, at TC = 25°C
Power Dissipation Derating, for TC > 25oC
TJ Operating Junction Temperature Range
TSTG Storage Junction Temperature Range
TL Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s)
TPKG Max. Lead Temp. for Soldering (Package Body for 10s)
ESD Electrostatic Discharge Voltage at100pF, 1500Ω
@2014 Fairchild Semiconductor Corporation
1
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
COLLECTOR
R1
R2
EMITTER
Ratings
400
28
335
195
26.9
25
±10
166
1.1
-40 to +175
-40 to +175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/oC
oC
oC
oC
oC
kV
www.fairchildsemi.com
Typical Performance Curves
100
RG = 1KΩ, VGE = 5V, VCE = 100V
TJ = 25oC
10
TJ = 150oC
1 SCIS Curves valid for Vclamp Voltages of <430V
10 100
tCLP, TIME IN CLAMP (μS)
1000
Figure 1. Self Clamped Inductive Switching
Current vs. Time in Clamp
30
RG = 1KΩ, VGE = 5V, VCE = 100V
20
TJ = 25oC
10
TJ = 150oC
0 SCIS Curves valid for Vclamp Voltages of <430V
0 3 6 9 12
L, INDUCTANCE (mHy)
15
Figure 2. Self Clamped Inductive Switching
Current vs. Inductance
1.20
1.15
VGE = 3.7V
VGE = 4.0V
ICE = 6A
1.10
1.05
VGE = 8V
VGE = 5V
VGE = 4.5V
1.00
-75 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERTURE (oC)
Figure 3. Collector to Emitter On-State Voltage
vs. Junction Temperature
1.50
1.45
ICE = 10A
1.40
1.35
VGE = 3.7V
VGE = 4.0V
1.30
1.25
1.20
1.15
VGE = 5V
VGE = 8V
VGE = 4.5V
1.10
-75 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERTURE (oC)
Figure 4. Collector to Emitter On-State Voltage
vs. Junction Temperature
30
VGE = 8.0V
VGE = 5.0V
VGE = 4.5V
20
VGE = 4.0V
VGE = 3.7V
30
VGE = 8.0V
VGE = 5.0V
VGE = 4.5V
20
VGE = 4.0V
VGE = 3.7V
10 10
0 TJ = -40oC
01234
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage
vs. Collector Current
0 TJ = 25oC
01234
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
vs. Collector Current
@2014 Fairchild Semiconductor Corporation
4
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
www.fairchildsemi.com
4페이지 Test Circuit and Waveforms
L
C
PULSE
GEN
RG
G
DUT
E
VCC
RG = 1KΩ
5V
R
or LOAD
L
C
G
DUT
E
+
VCC
-
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
VARY tP TO OBTAIN
REQUIRED PEAK ISCIS
VGE
tP
0V
VCE
C
RG G
DUT
L
+
VCC
-
E
ISCIS
0.01Ω
0
Figure 19. Energy Test Circuit
tP
ISCIS
BVCES
VCE
VCC
tAV
Figure 20. Energy Waveforms
@2014 Fairchild Semiconductor Corporation
7
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
www.fairchildsemi.com
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ FGP3440G2_F085.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FGP3440G2_F085 | N-Channel Ignition IGBT | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |