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PDF ISL9V2540S3ST Data sheet ( Hoja de datos )
| Número de pieza | ISL9V2540S3ST | |
| Descripción | N-Channel Ignition IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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November 2009
ISL9V2540S3ST
EcoSPARK® N-Channel Ignition IGBT
250mJ, 400V
Features
! SCIS Energy = 250mJ at TJ = 25oC
! Logic Level Gate Drive
! Qualified to AEC Q101
! RoHS Compliant
Applications
! Automotive Ignition Coil Driver Circuits
! Coil - On Plug Applications
General Description
The ISL9V2540S3ST is a next generation ignition IGBT that
offers outstanding SCIS capability in the industry standard
D²-Pak (TO-263) plastic package. This device is intended
for use in automotive ignition circuits, specifically as a coil
driver. Internal diodes provide voltage clamping without the
need for external components.
EcoSPARK® devices can be custom made to specific
clamp voltages. Contact your nearest Fairchild sales office
for more information.
Package
GATE
EMITTER
COLLECTOR
(FLANGE)
JEDEC TO-263AB
D2-Pak
Symbol
GATE
R1
R2
COLLECTOR
EMITTER
©2009 Fairchild Semiconductor Corporation
ISL9V2540S3ST Rev. A1
www.fairchildsemi.com
1 page  
Typical Performance Curves (Continued)
20
VGE = 10.0V
VGE = 5.0V
15 VGE = 4.5V
VGE = 4.0V
VGE = 3.5V
10
VGE = 3.0V
5
TJ = 175°C
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
16
VGE = 4.0V
14
12
10
8
6
4
2
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case
Temperature
10000
1000
VECS = 24V
100
10
VCES = 300V
1
VCES = 250V
0.1
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction
Temperature
©2009 Fairchild Semiconductor Corporation
ISL9V2540S3ST Rev A1.
20
DUTY CYCLE < 0.5%, VCE = 5V
PULSE DURATION = 250µs
15
TJ = 175°C
10
5 TJ = 25°C
TJ = -40°C
0
1.0 1.5 2.0 2.5 3.0 3.5
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 8. Transfer Characteristics
4.0
2.0
VCE = VGE
ICE = 1mA
1.8
1.6
1.4
1.2
1.0
-50 -25 0 25 50 75 100 125 150 175
TJ JUNCTION TEMPERATURE (°C)
Figure 10. Threshold Voltage vs Junction
Temperature
10
Inductive tOFF
9
ICE = 6.5A, VGE = 5V, RG = 1KΩ
8
7
6 Resistive tOFF
5
4
3
Resistive tON
2
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Switching Time vs Junction
Temperature
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet ISL9V2540S3ST.PDF ] | |
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