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ISL9V3040P3 데이터시트 PDF




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부품번호 ISL9V3040P3 기능
기능 N-Channel Ignition IGBT
제조업체 Fairchild Semiconductor
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ISL9V3040P3 데이터시트, 핀배열, 회로
October 20
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /
ISL9V3040S3
EcoSPARKŠ 300mJ, 400V, N-Channel Ignition IGBT
General Description
The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and
ISL9V3040S3 are the next generation ignition IGBTs that offer
outstanding SCIS capability in the space saving D-Pak (TO-252), as
well as the industry standard D²-Pak (TO-263), and TO-262 and TO-
220 plastic packages. This device is intended for use in automotive
ignition circuits, specifically as a coil driver. Internal diodes provide
voltage clamping without the need for external components.
EcoSPARKŠ devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
Formerly Developmental Type 49362
Applications
• Automotive Ignition Coil Driver Circuits
• Coil- On Plug Applications
Features
• Space saving D-Pak package availability
• SCIS Energy = 300mJ at TJ = 25oC
• Logic Level Gate Drive
Package
JEDEC TO-263AB
D²-Pak
JEDEC TO-220AB
E CG
Symbol
G
E
JEDEC TO-252AA
D-Pak
G
E
JEDEC TO-262AA
EC
G
GATE
COLLECTOR
(FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
BVCER
BVECS
ESCIS25
ESCIS150
IC25
IC110
VGEM
PD
TJ
TSTG
TL
Tpkg
ESD
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
At Starting TJ = 25°C, ISCIS = 14.2A, L = 3.0 mHy
At Starting TJ = 150°C, ISCIS = 10.6A, L = 3.0 mHy
Collector Current Continuous, At TC = 25°C, See Fig 9
Collector Current Continuous, At TC = 110°C, See Fig 9
Gate to Emitter Voltage Continuous
Power Dissipation Total TC = 25°C
Power Dissipation Derating TC > 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500
COLLECTOR
R1
R2
EMITTER
Ratings
430
24
300
170
21
17
±10
150
1.0
-40 to 175
-40 to 175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/°C
°C
°C
°C
°C
kV
©2004 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D, October 20




ISL9V3040P3 pdf, 반도체, 판매, 대치품
Typical Performance Curves (Continued)
25
VGE = 8.0V
VGE = 5.0V
20 VGE = 4.5V
VGE = 4.0V
15 VGE = 3.7V
10
5
0
0
TJ = 175°C
1.0 2.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
25
VGE = 4.0V
20
15
10
5
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case
Temperature
10000
1000
VECS = 24V
100
10
VCES = 300V
1
VCES = 250V
0.1
-50 -25
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction
Temperature
©2004 Fairchild Semiconductor Corporation
25
DUTY CYCLE < 0.5%, VCE = 5V
PULSE DURATION = 250µs
20
15
TJ = 150°C
10
TJ = 25°C
5
TJ = -40°C
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 8. Transfer Characteristics
4.5
2.2
VCE = VGE
2.0 ICE = 1mA
1.8
1.6
1.4
1.2
1.0
-50 -25
0
25 50 75 100 125 150 175
TJ JUNCTION TEMPERATURE (°C)
Figure 10. Threshold Voltage vs Junction
Temperature
12
ICE = 6.5A, VGE = 5V, RG = 1K
Resistive tOFF
10
Inductive tOFF
8
6
4
Resistive tON
2
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Switching Time vs Junction
Temperature
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D, October 20

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ISL9V3040P3 전자부품, 판매, 대치품
SPICE Thermal Model
REV 7 March 2002
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /
ISL9V3040S3
CTHERM1 th 6 2.1e -3
CTHERM2 6 5 1.4e -1
CTHERM3 5 4 7.3e -3
CTHERM4 4 3 2.1e -1
CTHERM5 3 2 1.1e -1
CTHERM6 2 tl 6.2e +6
RTHERM1 th 6 1.2e -1
RTHERM2 6 5 1.9e -1
RTHERM3 5 4 2.2e -1
RTHERM4 4 3 6.0e -2
RTHERM5 3 2 5.8e -2
RTHERM6 2 tl 1.6e -3
SABER Thermal Model
SABER thermal model
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /
ISL9V3040S3
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 2.1e -3
ctherm.ctherm2 6 5 = 1.4e -1
ctherm.ctherm3 5 4 = 7.3e -3
ctherm.ctherm4 4 3 = 2.2e -1
ctherm.ctherm5 3 2 =1.1e -1
ctherm.ctherm6 2 tl = 6.2e +6
rtherm.rtherm1 th 6 = 1.2e -1
rtherm.rtherm2 6 5 = 1.9e -1
rtherm.rtherm3 5 4 = 2.2e -1
rtherm.rtherm4 4 3 = 6.0e -2
rtherm.rtherm5 3 2 = 5.8e -2
rtherm.rtherm6 2 tl = 1.6e -3
}
th JUNCTION
RTHERM1
RTHERM2
6
5
RTHERM3
RTHERM4
4
RTHERM5
3
RTHERM6
2
CTHERM1
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
tl CASE
©2004 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D4, October 2013

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관련 데이터시트

부품번호상세설명 및 기능제조사
ISL9V3040P3

N-Channel Ignition IGBT

Fairchild Semiconductor
Fairchild Semiconductor
ISL9V3040P3

EcoSPARKTM 300mJ/ 400V/ N-Channel Ignition IGBT

Fairchild Semiconductor
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