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ISL9V5036P3 데이터시트 PDF




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부품번호 ISL9V5036P3 기능
기능 N-Channel Ignition IGBT
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ISL9V5036P3 데이터시트, 핀배열, 회로
November 2009
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
EcoSPARK® 500mJ, 360V, N-Channel Ignition IGBT
General Description
The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next
generation IGBTs that offer outstanding SCIS capability in the D²-
Pak (TO-263) and TO-220 plastic package. These devices are
intended for use in automotive ignition circuits, specifically as coil
drivers. Internal diodes provide voltage clamping without the need
for external components.
EcoSPARK® devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
Formerly Developmental Type 49443
Applications
• Automotive Ignition Coil Driver Circuits
• Coil-On Plug Applications
Features
• Industry Standard D2-Pak package
• SCIS Energy = 500mJ at TJ = 25oC
• Logic Level Gate Drive
• Qualified to AEC Q101
• RoHS Compliant
Package
JEDEC TO-263AB
D²-Pak
G
E
Symbol
JEDEC TO-220AB
JEDEC TO-262AA
ECG
ECG
GATE
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
BVCER
BVECS
ESCIS25
ESCIS150
IC25
IC110
VGEM
PD
TJ
TSTG
TL
Tpkg
ESD
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
At Starting TJ = 25°C, ISCIS = 38.5A, L = 670 µHy
At Starting TJ = 150°C, ISCIS = 30A, L = 670 µHy
Collector Current Continuous, At TC = 25°C, See Fig 9
Collector Current Continuous, At TC = 110°C, See Fig 9
Gate to Emitter Voltage Continuous
Power Dissipation Total TC = 25°C
Power Dissipation Derating TC > 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500
COLLECTOR
R1
R2
EMITTER
Ratings
390
24
500
300
46
31
±10
250
1.67
-40 to 175
-40 to 175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/°C
°C
°C
°C
°C
kV
©2009 Fairchild Semiconductor Corporation
ISL9V5036S3S / ISl9V5036P3 / ISL9V5036S3 Rev. C4, November 2009




ISL9V5036P3 pdf, 반도체, 판매, 대치품
Typical Characteristics (Continued)
50
VGE = 8.0V
VGE = 5.0V
40 VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
30
20
10
TJ = 175°C
0
0 1.0 2.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
50
VGE = 4.0V
40
30
20
10
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case
Temperature
10000
1000
VECS = 24V
100
VCES = 300V
10
VCES = 250V
1
0.1
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction
Temperature
50
DUTY CYCLE < 0.5%, VCE = 5V
PULSE DURATION = 250µs
40
30
TJ = 175°C
20
TJ = 25°C
10
TJ = -40°C
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 8. Transfer Characteristics
4.5
VCE = VGE
2.0
ICE = 1mA
1.8
1.6
1.4
1.2
1.0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Threshold Voltage vs Junction
Temperature
20
ICE = 6.5A, VGE = 5V, RG = 1K
18
Resistive tOFF
16
14
Inductive tOFF
12
10
8
6
Resistive tON
4
2
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Switching Time vs Junction
Temperature
©2009 Fairchild Semiconductor Corporation
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C4, November 2009

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ISL9V5036P3 전자부품, 판매, 대치품
SPICE Thermal Model
REV 1 May 2002
ISL9V5036S3S / ISL9V3536P3 / ISL9V5036S3
CTHERM1 th 6 4.0e2
CTHERM2 6 5 3.6e-3
CTHERM3 5 4 4.9e-2
CTHERM4 4 3 3.2e-1
CTHERM5 3 2 3.0e-1
CTHERM6 2 tl 1.6e-2
RTHERM1 th 6 1.0e-2
RTHERM2 6 5 1.4e-1
RTHERM3 5 4 1.0e-1
RTHERM4 4 3 9.0e-2
RTHERM5 3 2 9.4e-2
RTHERM6 2 tl 1.9e-2
SABER Thermal Model
SABER thermal model
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 4.0e2
ctherm.ctherm2 6 5 = 3.6e-3
ctherm.ctherm3 5 4 = 4.9e-2
ctherm.ctherm4 4 3 = 3.2e-1
ctherm.ctherm5 3 2 = 3.0e-1
ctherm.ctherm6 2 tl = 1.6e-2
rtherm.rtherm1 th 6 = 1.0e-2
rtherm.rtherm2 6 5 = 1.4e-1
rtherm.rtherm3 5 4 = 1.0e-1
rtherm.rtherm4 4 3 = 9.0e-2
rtherm.rtherm5 3 2 = 9.4e-2
rtherm.rtherm6 2 tl = 1.9e-2
}
th JUNCTION
RTHERM1
RTHERM2
6
5
RTHERM3
RTHERM4
4
RTHERM5
3
RTHERM6
2
CTHERM1
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
tl CASE
©2009 Fairchild Semiconductor Corporation
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C4, November 2009

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관련 데이터시트

부품번호상세설명 및 기능제조사
ISL9V5036P3

N-Channel Ignition IGBT

Fairchild Semiconductor
Fairchild Semiconductor
ISL9V5036P3

EcoSPARKTM 500mJ/ 360V/ N-Channel Ignition IGBT

Fairchild Semiconductor
Fairchild Semiconductor

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