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FDS6681Z 데이터시트 PDF




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기능 MOSFET ( Transistor )
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FDS6681Z 데이터시트, 핀배열, 회로
Aug 2015
FDS6681Z
30 Volt P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that
has been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and
load switching applications common in Notebook
Computers and Portable Battery Packs.
Features
–20 A, –30 V. RDS(ON) = 4.6 m@ VGS = –10 V
RDS(ON) = 6.5 m@ VGS = –4.5 V
Extended VGSS range (–25V) for battery applications
HBM ESD protection level of 8kV typical (note 3)
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
Termination is Lead-free and RoHS Compliant
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
Package Marking and Ordering Information
Device Marking
FDS6681Z
Device
FDS6681Z
Reel Size
13’’
5
6
7
8
Ratings
–30
±25
–20
–105
2.5
1.2
1.0
–55 to +150
50
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
FDS6681Z Rev 1.2 (W)




FDS6681Z pdf, 반도체, 판매, 대치품
Typical Characteristics
105
VGS = -10V
90
-6.0V
75
60
45
-4.0V
-4.5V
-3.5V
30
15
0
0
-3.0V
0.5 1 1.5
-VDS, DRAIN-SOURCE VOLTAGE (V)
2
Figure 1. On-Region Characteristics.
2.4
VGS = -3.5V
2.2
2
1.8
1.6 -4.0V
1.4 -4.5V
-5.0V
1.2 -6.0V
-8.0V
1 -10V
0.8
0
15 30 45 60 75 90 105
-ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = -20A
VGS = -10V
1.4
1.2
1
0.8
0.6
-50 -30 -10 10 30 50 70 90 110 130 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0.012
0.01
ID = -10A
0.008
0.006
TA = 125oC
0.004
TA = 25oC
0.002
2
468
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
105
VDS = -5V
90
75
60
45
TA = 125oC
30
-55oC
15
0
1
25oC
1.25 1.5 1.75
2
-VGS, GATE TO SOURCE VOLTAGE (V)
2.25
Figure 5. Transfer Characteristics.
1000
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0
0.2 0.4 0.6 0.8
1
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6681Z Rev 1.2 (W)

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FDS6681Z 전자부품, 판매, 대치품
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