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부품번호 | FDS6681Z 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 7 페이지수
Aug 2015
FDS6681Z
30 Volt P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that
has been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and
load switching applications common in Notebook
Computers and Portable Battery Packs.
Features
• –20 A, –30 V. RDS(ON) = 4.6 mΩ @ VGS = –10 V
RDS(ON) = 6.5 mΩ @ VGS = –4.5 V
• Extended VGSS range (–25V) for battery applications
• HBM ESD protection level of 8kV typical (note 3)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
• Termination is Lead-free and RoHS Compliant
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
Package Marking and Ordering Information
Device Marking
FDS6681Z
Device
FDS6681Z
Reel Size
13’’
5
6
7
8
Ratings
–30
±25
–20
–105
2.5
1.2
1.0
–55 to +150
50
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
FDS6681Z Rev 1.2 (W)
Typical Characteristics
105
VGS = -10V
90
-6.0V
75
60
45
-4.0V
-4.5V
-3.5V
30
15
0
0
-3.0V
0.5 1 1.5
-VDS, DRAIN-SOURCE VOLTAGE (V)
2
Figure 1. On-Region Characteristics.
2.4
VGS = -3.5V
2.2
2
1.8
1.6 -4.0V
1.4 -4.5V
-5.0V
1.2 -6.0V
-8.0V
1 -10V
0.8
0
15 30 45 60 75 90 105
-ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = -20A
VGS = -10V
1.4
1.2
1
0.8
0.6
-50 -30 -10 10 30 50 70 90 110 130 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0.012
0.01
ID = -10A
0.008
0.006
TA = 125oC
0.004
TA = 25oC
0.002
2
468
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
105
VDS = -5V
90
75
60
45
TA = 125oC
30
-55oC
15
0
1
25oC
1.25 1.5 1.75
2
-VGS, GATE TO SOURCE VOLTAGE (V)
2.25
Figure 5. Transfer Characteristics.
1000
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0
0.2 0.4 0.6 0.8
1
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6681Z Rev 1.2 (W)
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부품번호 | 상세설명 및 기능 | 제조사 |
FDS6681Z | MOSFET ( Transistor ) | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |