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부품번호 | FDS4897AC 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 11 페이지수
FDS4897AC
October 2008
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 40 V, 6.1 A, 26 mΩ P-Channel: -40 V, -5.2 A, 39 mΩ
Features
General Description
Q1: N-Channel
Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.1 A
Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 5.6 A
Q2: P-Channel
Max rDS(on) = 39 mΩ at VGS = -10 V, ID = -5.2 A
Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.1 A
100% UIL Tested
RoHS Compliant
These dual N- and P-Channel MOSFETs are produced using
Fairchild Semiconductor's advanced PowerTrench® process
that has been especially tailored to minimize on-state resistance
and yet maintain superior switching performance.
Applications
Inverter
Power Supplies
D2
D2
D1
D1
Pin 1
G2
S2
G1
S1
SO-8
D2 5
D2 6
D1 7
D1 8
Q2
Q1
4 G2
3 S2
2 G1
1 S1
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
EAS
TJ, TSTG
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range
Thermal Characteristics
TA = 25 °C (Note 1a)
TA = 25 °C (Note 1b)
(Note 3)
Q1 Q2
40 -40
±20 ±20
6.1 -5.2
24 -24
2.0
1.6
0.9
37 73
-55 to +150
Units
V
V
A
W
mJ
°C
RθJC
RθJC
Thermal Resistance, Junction to Case,
Thermal Resistance, Junction to Ambient,
Package Marking and Ordering Information
(Note 1)
(Note 1a)
40
78
°C/W
Device Marking
FDS4897AC
Device
FDS4897AC
Package
SO-8
Reel Size
13 ”
Tape Width
12 mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDS4897AC Rev.C
1
www.fairchildsemi.com
Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
24
VGS = 10 V
20 VGS = 4.5 V
VGS = 4 V
16
VGS = 3.5 V
12
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
8
4
VGS = 3 V
0
0.0 0.5 1.0 1.5 2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1.8
ID = 6.1 A
1.6 VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
5
PULSE DURATION = 80 µs
VGS = 3 V
DUTY CYCLE = 0.5% MAX
4
VGS = 3.5 V
3
2
1
0.5
0
VGS = 4 V VGS = 4.5 V
4 8 12 16
ID, DRAIN CURRENT (A)
VGS = 10 V
20 24
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
80
70
60
50
40
30
20
10
2
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
ID = 6.1 A
TJ = 125 oC
TJ = 25 oC
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to
Source Voltage
24
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
20
VDS = 5 V
16
12
TJ = 150 oC
8
TJ = 25 oC
TJ = -55 oC
4
0
1234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
40
10 VGS = 0 V
1 TJ = 150 oC
0.1
0.01
TJ = 25 oC
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2008 Fairchild Semiconductor Corporation
FDS4897AC Rev.C
4
www.fairchildsemi.com
4페이지 Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted
24
VGS = -10 V
20 VGS = -5 V
16
VGS = -4.5 V
VGS = - 4 V
12 PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
8 VGS = -3.5 V
4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 15. On- Region Characteristics
5
4
3
2
1
0.5
0
VGS = -3.5 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = -4 V
VGS = -4.5 V
4 8 12 16
-ID, DRAIN CURRENT (A)
VGS = -5 V
VGS = -10 V
20 24
Figure 16. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.8
ID = -5.2 A
1.6 VGS = -10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 17. Normalized On-Resistance
vs Junction Temperature
120
ID = -5.2 A
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
100
80
60
40
20
2
TJ = 125 oC
TJ = 25 oC
468
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 18. On-Resistance vs Gate to
Source Voltage
24
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
20
VDS = -5 V
16
12
TJ = 150 oC
8
TJ = 25 oC
TJ = -55 oC
4
0
1234
-VGS, GATE TO SOURCE VOLTAGE (V)
5
Figure 19. Transfer Characteristics
40
VGS = 0 V
10
1 TJ = 150 oC
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 20. Source to Drain Diode
Forward Voltage vs Source Current
©2008 Fairchild Semiconductor Corporation
FDS4897AC Rev.C
7
www.fairchildsemi.com
7페이지 | |||
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FDS4897AC | MOSFET ( Transistor ) | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |