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PDF FDT86102LZ Data sheet ( Hoja de datos )
| Número de pieza | FDT86102LZ | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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November 2010
FDT86102LZ
N-Channel PowerTrench® MOSFET
100 V, 6.6 A, 28 mΩ
Features
Max rDS(on) = 28 mΩ at VGS = 10 V, ID = 6.6 A
Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5.5 A
HBM ESD protection level > 6 kV typical (Note 4)
Very low Qg and Qgd compared to competing trench
technologies
Fast switching speed
100% UIL Tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Applications
DC-DC conversion
Inverter
Synchronous Rectifier
D
SOT-223
S
D
G
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 1b)
Ratings
100
±20
6.6
40
84
2.2
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
12
55
°C/W
Device Marking
86102LZ
Device
FDT86102LZ
Package
SOT-223
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2010 Fairchild Semiconductor Corporation
FDT86102LZ Rev. C
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2000
1000
100
10
1
0.5
10-4
SINGLE PULSE
RθJA = 118 oC/W
TA = 25 oC
10-3
10-2
10-1
1
t, PULSE WIDTH (sec)
10
Figure 13. Single Pulse Maximum Power Dissipation
2
1 DUTY CYCLE-DESCENDING ORDER
100
1000
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0005
10-4
10-3
PDM
SINGLE PULSE
RθJA = 118 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
10
100
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
1000
©2010 Fairchild Semiconductor Corporation
FDT86102LZ Rev. C
5
www.fairchildsemi.com
5 Page | ||
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