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FDT86256 데이터시트 PDF




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기능 MOSFET ( Transistor )
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FDT86256 데이터시트, 핀배열, 회로
FDT86256
N-Channel PowerTrench® MOSFET
150 V, 1.2 A, 845 mΩ
Features
„ Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.2 A
„ Max rDS(on) = 1280 mΩ at VGS = 6.0 V, ID = 1.0 A
„ Very low Qg and Qgd compared to competing trench
technologies
August 2011
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
„ Fast switching speed
„ 100% UIL Tested
„ RoHS Compliant
Applications
„ DC-DC conversion
„ Inverter
„ Synchronous Rectifier
D
SOT-223
S
D
G
D
GDS
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
150
±20
3
2.5
1.2
2
1
10
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
12
55
°C/W
Device Marking
86256
Device
FDT86256
Package
SOT-223
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2011 Fairchild Semiconductor Corporation
FDT86256 Rev. C
1
www.fairchildsemi.com




FDT86256 pdf, 반도체, 판매, 대치품
Typical Characteristics TJ = 25 °C unless otherwise noted
10
ID = 1.2 A
8
6
VDD = 65 V
4
VDD = 75 V
VDD = 85 V
2
0
0.0
0.3 0.6 0.9
Qg, GATE CHARGE (nC)
1.2
Figure 7. Gate Charge Characteristics
100
Ciss
Coss
10
Crss
1
f = 1 MHz
VGS = 0 V
0.5
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure8. CapacitancevsDrain
to Source Voltage
10
1
TJ = 25 oC
TJ = 100 oC
0.1
TJ = 125 oC
0.01
0.001
0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE (ms)
1000
Figure9. UnclampedInductive
Switching Capability
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
RθJA = 55 oC/W
VGS = 6 V
VGS = 10 V
50 75 100 125
TA, AMBIENT TEMPERATURE (oC)
150
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
3
THIS AREA IS
1 LIMITED BY rDS(on)
100 μs
0.1
0.01
0.005
0.01
SINGLE PULSE
TJ = MAX RATED
RθJA = 118 oC/W
TA = 25 oC
1 ms
10 ms
100 ms
1s
10 s
DC
0.1 1 10 100
VDS, DRAIN to SOURCE VOLTAGE (V)
500
Figure 11. Forward Bias Safe
Operating Area
100
10
SINGLEPULSE
RθJA=118oC/W
1 TA=25oC
0.5
10-3 10-2 10-1 1 10 100 1000
t,PULSEWIDTH(sec)
Figure 12. Single Pulse Maximum Power Dissipation
©2011 Fairchild Semiconductor Corporation
FDT86256 Rev. C
4
www.fairchildsemi.com

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FDT86256 전자부품, 판매, 대치품
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