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부품번호 | FDC658AP 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 6 페이지수
August 2015
FDC658AP
Single P-Channel Logic Level PowerTrench® MOSFET
-30V, -4A, 50m:
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild's advanced PowerTrench process. It has been
optimized for battery power management applications.
Applications
Battery management
Load switch
Battery protection
DC/DC conversion
Features
Max rDS(on) = 50 m: @ VGS = -10 V, ID = -4A
Max rDS(on) = 75 m: @ VGS = -4.5 V, ID = -3.4A
Low Gate Charge
High performance trench technology for extremely low
rDS(on)
RoHS Compliant
S
D
D
1
PIN 1
G
D
D
SuperSOTTM-6
2
3
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Drain-Source Voltage
Parameter
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Maximum Power dissipation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1a)
(Note 1b)
Thermal Characteristics
RTJA
RTJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
.58A
Device
FDC658AP
Reel Size
7inch
Tape Width
8mm
6
5
4
Ratings
-30
r25
-4
-20
1.6
0.8
-55 to +150
Units
V
V
A
W
°C
78 °C/W
30 °C/W
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDC658AP Rev. 1.3
1
www.fairchildsemi.com
Typical Characteristics
10
ID = -4A
8
6
VDS = -5V
-10V
-15V
4
2
0
02468
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
10
600
f = 1 MHz
Ciss VGS = 0 V
450
300
Coss
150
Crss
0
06
12 18 24 30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain to Source Voltage
100
rDS(on) LIMIT
10
100us
1ms
1 10ms
VGS = -10V
SINGLE PULSE
0.1 RșJA = 156oC/W
TA = 25oC
100ms
1s
DC
0.01
0.1 1 10 100
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe Operating Area
10
SINGLE PULSE
RșJA = 156°C/W
8 TA = 25°C
6
4
2
0
0.01 0.1 1 10
t, PULSE WIDTH (s)
100
Figure 10. Single Pulse Maximum Power
Dissipation
1
D = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RșJA(t) = r(t) x RșJA
RșJA = 156oC/W
P(pk)
t1
t2
TJ - TA = P x RșJA(t)
Duty Cycle, D = t1 / t2
0.001
0.00001
0.0001
0.001
0.01 0.1
1
t, RECTANGULAR PULSE DURATION
10
100 1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDC658AP Rev. 1.3
4 www.fairchildsemi.com
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FDC658AP | MOSFET ( Transistor ) | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |