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FDN86246 데이터시트 PDF




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기능 MOSFET ( Transistor )
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FDN86246 데이터시트, 핀배열, 회로
December 2010
FDN86246
N-Channel PowerTrench® MOSFET
150 V, 1.6 A, 261 m:
Features
General Description
„ Max rDS(on) = 261 m: at VGS = 10 V, ID = 1.6 A
„ Max rDS(on) = 359 m: at VGS = 6 V, ID = 1.4 A
„ High performance trench technology for extremely low rDS(on)
„ High power and current handling capability in a widely used
surface mount package
„ Fast switching speed
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been optimized for rDS(on), switching performance and
ruggedness.
Application
„ PD Switch
„ 100% UIL tested
„ RoHS Compliant
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
150
±20
1.6
6
13
1.5
0.6
-55 to +150
Units
V
V
A
mJ
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
75
80
°C/W
Device Marking
246
Device
FDN86246
Package
SSOT-3
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
FDN86246 Rev.C
1
www.fairchildsemi.com




FDN86246 pdf, 반도체, 판매, 대치품
Typical Characteristics TJ = 25 °C unless otherwise noted
10
ID = 1.6 A
8
6
4
VDD = 50 V
VDD = 75 V
VDD = 100 V
300
100
10
Ciss
Coss
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
3.5
3.0
2.5
TJ = 25 oC
2.0
TJ = 100 oC
1.5
TJ = 125 oC
1.0
0.01
0.1
tAV, TIME IN AVALANCHE (ms)
Figure9. UnclampedInductive
Switching Capability
1
200
100
f = 1 MHz
VGS = 0 V
1
0.1
1
Crss
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure8. CapacitancevsDrain
to Source Voltage
10
1 100 us
1 ms
0.1 THIS AREA IS
LIMITED BY rDS(on)
0.01
0.001
0.1
SINGLE PULSE
TJ = MAX RATED
RTJA = 180 oC/W
TA = 25 oC
1 10
10 ms
100 ms
1s
10 s
DC
100 500
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 10. Forward Bias Safe
Operating Area
SINGLE PULSE
RTJA = 180 oC/W
TA = 25 oC
10
1
0.5
10-4
10-3
10-2
10-1
1
t, PULSE WIDTH (sec)
10
Figure 11. Single Pulse Maximum Power Dissipation
100
1000
©2010 Fairchild Semiconductor Corporation
FDN86246 Rev.C
4
www.fairchildsemi.com

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FDN86246 전자부품, 판매, 대치품
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관련 데이터시트

부품번호상세설명 및 기능제조사
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MOSFET ( Transistor )

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