|
|
|
부품번호 | FDG327NZ 기능 |
|
|
기능 | MOSFET ( Transistor ) | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 6 페이지수
October 2015
FDG327NZ
20V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized use
in small switching regulators, providing an extremely
low RDS(ON) and gate charge (QG) in a small package.
Applications
• DC/DC converter
• Power management
• Load switch
Features
• 1.5 A, 20 V.
RDS(ON) = 90 mΩ @ VGS = 4.5 V.
RDS(ON) = 100 mΩ @ VGS = 2.5 V
RDS(ON) = 140 mΩ @ VGS = 1.8 V
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability.
S
D
D
Pin 1
SC70-6
G
D
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.37
FDG327NZ
7’’
Ratings
20
±8
1.5
6
0.42
0.38
–55 to +150
300
333
Tape width
8mm
Units
V
A
W
°C
°C/W
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
FDG327NZ Rev 1.2 (W)
Typical Characteristics
5
ID = 1.5A
4
3
VDS = 5V
15V
10V
2
1
0
012345
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
10
RDS(ON) LIMIT
100µs
1ms
10ms
1 100ms
1s
10s
DC
0.1 VGS = 4.5V
SINGLE PULSE
RθJA = 333oC/W
TA = 25oC
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
600
f = 1 MHz
VGS = 0 V
500
CISS
400
300
200
100
CRSS
0
0
COSS
5 10 15
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
20
SINGLE PULSE
RθJA = 333°C/W
TA = 25°C
15
10
5
0
0.0001 0.001 0.01
0.1
1
10 100 1000
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 333oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDG327NZ Rev 1.2 (W)
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ FDG327NZ.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FDG327N | 20V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
FDG327NZ | MOSFET ( Transistor ) | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |