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Datasheet FDY1002PZ Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FDY1002PZ | MOSFET, Transistor FDY1002PZ Dual P-Channel (–1.5 V) Specified PowerTrench® MOSFET
FDY1002PZ
Dual P-Channel (–1.5 V) Specified PowerTrench® MOSFET
October 2008
–20 V, –0.83 A, 0.5 Ω
Features
General Description
Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A Max rDS(on) = 0.7 Ω at VGS |  Fairchild Semiconductor | mosfet |
FDY Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FDY1002PZ | MOSFET, Transistor FDY1002PZ Dual P-Channel (–1.5 V) Specified PowerTrench® MOSFET
FDY1002PZ
Dual P-Channel (–1.5 V) Specified PowerTrench® MOSFET
October 2008
–20 V, –0.83 A, 0.5 Ω
Features
General Description
Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A Max rDS(on) = 0.7 Ω at VGS Fairchild Semiconductor mosfet | | |
| 2 | FDY100PZ | Single P-Channel Specified PowerTrench MOSFET
January 2006
FDY100PZ Single P-Channel (– 2.5V) Specified PowerTrench® MOSFET
FDY100PZ
Single P-Channel (– 2.5V) Specified PowerTrench® MOSFET
General Description
This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench proce Fairchild Semiconductor mosfet | | |
| 3 | FDY101PZ | Single P-Channel Specified PowerTrench MOSFET
FDY101PZ Single P-Channel (– 2.5V) Specified PowerTrench® MOSFET
January 2006
FDY101PZ
Single P-Channel (– 2.5V) Specified PowerTrench® MOSFET
General Description
This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench proce Fairchild Semiconductor mosfet | | |
| 4 | FDY102PZ | MOSFET, Transistor FDY102PZ Single P-Channel (–1.5 V) Specified PowerTrench® MOSFET
FDY102PZ
Single P-Channel (–1.5 V) Specified PowerTrench® MOSFET
April 2014
–20 V, –0.83 A, 0.5 Ω
Features
General Description
Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A Max rDS(on) = 0.7 Ω at VGS = Fairchild Semiconductor mosfet | | |
| 5 | FDY2000PZ | Dual P-Channel Specified PowerTrenchR MOSFET
January 2006
FDY2000PZ Dual P-Channel (– 2.5V) Specified PowerTrench® MOSFET
FDY2000PZ
Dual P-Channel (– 2.5V) Specified PowerTrench® MOSFET
General Description
This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process t Fairchild Semiconductor mosfet | | |
| 6 | FDY2001PZ | Dual P-Channel Specified PowerTrench MOSFET
January 2006
FDY2001PZ Dual P-Channel (– 2.5V) Specified PowerTrench® MOSFET
FDY2001PZ
Dual P-Channel (– 2.5V) Specified PowerTrench® MOSFET
General Description
This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process t Fairchild Semiconductor mosfet | | |
| 7 | FDY3000NZ | Dual N-Channel Specified PowerTrench MOSFET
FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET
January 2006
FDY3000NZ
Dual N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize t Fairchild Semiconductor mosfet | |
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