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부품번호 | FDD3860 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
FDD3860
N-Channel PowerTrench® MOSFET
100 V, 29 A, 36 mΩ
Features
Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A
High Performance Trench Technology for Extremely Low
rDS(on)
100% UIL Tested
RoHS Compliant
September 2016
General Description
This N-Channel MOSFET is rugged gate version of Fairchild
Semiconductor‘s advanced Power Trench® process. This part is
tailored for low rDS(on) and low Qg figure of merit, with avalanche
ruggedness for a wide range of switching applications.
Applications
DC-AC Conversion
Synchronous Rectifier
G
S
D
DT O-P-2A5K2
(T O -25 2)
D
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
29
6.2
60
121
83
3.75
-55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.8
40
°C/W
Device Marking
FDD3860
Device
FDD3860
Package
D-PAK (TO-252)
Reel Size
13’’
Tape Width
16 mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDD3860 Rev.1.3
1
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted.
10
ID = 5.9A
8
6
VDD = 25V
VDD = 50V
VDD = 75V
4
2
0
0 5 10 15 20
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
25
10
8
6
4
TJ = 125oC
TJ = 25oC
2
3000
1000
Ciss
Coss
100
f = 1MHz
VGS = 0V
Crss
10
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure8. Capacitance vs. Drain
to Source Voltage
35
28
VGS = 10V
21
14
RθJC = 1.8oC/W
7
100
1
0.01
0.1 1 10
tAV, TIME IN AVALANCHE (ms)
Figure9. Unclamped Inductive
Switching Capability
100
100
10
100us
1
THIS AREA IS
LIMITED BY rds(on)
0.1
0.1
1
SINGLE PULSE
TJ = MAX RATED
RθJC = 1.8oC/W
TC = 25oC
10
1ms
10ms
DC
100 300
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
150
105
VGS = 10V
104
103
SINGLE PULSE
RθJC = 1.8oC/W
102
10
10-6
10-5
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
1
Figure 12. Single Pulse Maximum Power Dissipation
©2008 Fairchild Semiconductor Corporation
FDD3860 Rev.1.3
4
www.fairchildsemi.com
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부품번호 | 상세설명 및 기능 | 제조사 |
FDD3860 | MOSFET ( Transistor ) | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |