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부품번호 | FDD390N15ALZ 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 10 페이지수
FDD390N15ALZ
N-Channel PowerTrench® MOSFET
150 V, 26 A, 42 m
January 2014
Features
• RDS(on) = 33.4 m (Typ.) @ VGS = 10 V, ID = 26 A
• RDS(on) = 42.2 m (Typ.) @ VGS = 4.5 V, ID = 20 A
• Fast Switching Speed
• Low Gate Charge, QG = 17.6 nC (Typ.)
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Consumer Applicances
• LED TV
• Synchronous Rectification
• Uninterruptible Power Supplies
• Micro Solar Inverter
G
S
D
D-PAK
D
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDD390N15ALZ
150
±20
26
17
104
96
13
63
0.5
-55 to +150
300
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD390N15ALZ
2.0
87
Unit
oC/W
©2012 Fairchild Semiconductor Corporation
FDD390N15ALZ Rev. C4
1
www.fairchildsemi.com
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.10
1.05
Figure 8. On-Resistance Variation
vs. Temperature
2.6
2.4
2.0
1.00
0.95
0.90
-80
*Notes:
1. VGS = 0V
2. ID = 250A
-40 0
40 80 120
TJ, Junction Temperature [oC]
160
Figure 9. Maximum Safe Operating Area
200
100
10 100s
1 Operation in This Area
is Limited by R DS(on)
SINGLE PULSE
0.1 TC = 25oC
TJ = 150oC
1ms
10ms
100ms
DC
0.01
1
RJC = 2.0oC/W
10
100
VDS, Drain-Source Voltage [V]
200
Figure 11. Eoss vs. Drain to Source Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0.0 0
30 60 90 120
VDS, Drain to Source Voltage [V]
150
1.6
1.2
0.8
0.4
-80
*Notes:
1. VGS = 10V
2. ID = 26A
-40 0
40 80 120
TJ, Junction Temperature [oC]
160
Figure 10. Maximum Drain Current
vs. Case Temperature
30
25
20 VGS = 10V
15
VGS = 4.5V
10
5
RJC = 2.0oC/W
0
25 50 75 100 125
TC, Case Temperature [oC]
150
Figure 12. Unclamped Inductive
Switching Capability
15
10
TJ = 25 oC
TJ = 125 oC
1
0.01
0.1 1 10
tAV, TIME IN AVALANCHE (ms)
100
©2012 Fairchild Semiconductor Corporation
FDD390N15ALZ Rev. C4
4
www.fairchildsemi.com
4페이지 DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2012 Fairchild Semiconductor Corporation
FDD390N15ALZ Rev. C4
7
www.fairchildsemi.com
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
FDD390N15ALZ | MOSFET ( Transistor ) | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |