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MXP6010CTS PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 MXP6010CTS
기능 60V N-Channel MOSFET
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MXP6010CTS 데이터시트, 핀배열, 회로
60V N-Channel MOSFET
MXP6010CTS Datasheet
Applications:
Power Supply
DC-DC Converters
Features:
Lead Free
Low RDS(ON) to Minimize Conductive Loss
Low Gate Change for Fast Switching Application
Optimized BVDSS Capability
Ordering Information
Part Number
Package
MXP6010CTS
TO220
Brand
MXP
VDSS
60 V
RDS(ON) (Max)
10.0 mΩ
IDa
107 A
Absolute Maximum Ratings
Tc=25unless otherwise specified
Symbol
Parameter
Value
Units
VDS Drain-to-Source Voltage
IDa
Continuous Drain Current
(TC=25)
60 V
107 A
EAS Single Pulse Avalanche Energy (L=1mH)
570 mJ
IAS Pulsed Avalanche Energy
Figure.9
A
TJ and TSTG Operating Junction and Storage Temperature Range
-55 to 175
a. Calculated continuous current based upon maximum allowable junction temperature, +175. Package limitation current is 80A.
OFF Characteristics
TJ=25unless otherwise specified
Symbol
Parameter
BVDSS
Drain-to-Source Breakdown
Voltage
IDSS
Drain-to-Source Leakage
Current
Gate-to-Source Forward
IGSS
Leakage
Gate-to-Source Reverse
Leakage
©MaxPower Semiconductor Inc.
Min Typ Max Units
Test Conditions
60 V VGS=0V, ID=250µA
1 VDS=48V, VGS=0V
µA
100 VDS=48V, VGS=0V TJ=125
100 VGS=+20V
nA
100 VGS= -20V
1 MXP6010CTS Rev 1.0, Jan 2011




MXP6010CTS pdf, 반도체, 판매, 대치품
Figure 7. Typical Gate Charge vs. Gate-to-
Source Voltage
10
9
8
7
6
5
4
3
2
1
0
0 10 20 30 40
QG, Gate Charge(nC)
50
Figure 9. Unclamped Inductive Switching
Capability
1000
Starting TJ=25oC
100
10
Figure 8. Typical Capacitance vs. Drain-to-
Source Voltage
5000
4000
3000
CISS
2000
1000
0
0
C COSS RSS
10 20 30 40 50
VDS, Drain Voltage(V)
60
Figure 10. Source-Drain Diode Forward
Voltage
1000
100
TJ=175oC
10
1
TJ=25oC
1
1.E-04
1.E-03
1.E-02
tAV, Time in Avalanche(s)
1.E-01
0
0.00
0.40 0.80 1.20 1.60
VSD, Source-to-Drain Voltage(V)
2.00
©MaxPower Semiconductor Inc. 4 MXP6010CTS Rev 1.0, Jan 2011

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MXP6010CTS

60V N-Channel MOSFET

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