FDP023N08B Datasheet PDF - Fairchild Semiconductor
| Part Number | FDP023N08B | |
| Description | MOSFET ( Transistor ) | |
| Manufacturers | Fairchild Semiconductor | |
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There is a preview and FDP023N08B download ( pdf file ) link at the bottom of this page. Total 11 Pages | ||
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FDP023N08B
N-Channel PowerTrench® MOSFET
75 V, 242 A, 2.35 mΩ
November 2013
Features
• RDS(on) = 1.96 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A
• Low FOM RDS(on)*QG
• Low Reverse Recovery Charge, Qrr
• Soft Reverse Recovery Body Diode
• Enables Highly Efficiency in Synchronous Rectification
• Fast Switching Speed
• 100% UIL Tested
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• DC motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverte
D
GDS TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
* Package limitation current is 120A.
FDP023N08B_F102
75
±20
242*
171*
120
968
961
6
245
1.64
-55 to +175
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP023N08B_F102
0.61
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2013 Fairchild Semiconductor Corporation
FDP023N08B Rev. C3
1
www.fairchildsemi.com
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Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
1
0.5
0.1 0.2
0.1
0.05
0.01
0.02
0.01
Single pulse
0.001
10-5
10-4
PDM
*Notes:
t1
t2
1. ZθJC(t) = 0.61oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
Rt1e, cRteacntagnuglualraPr PuulslseeDDuurraatioonn[[sseecc]]
10-1
1
©2013 Fairchild Semiconductor Corporation
FDP023N08B Rev. C3
5
www.fairchildsemi.com
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FDP023N08B electronic component. |
| Information | Total 11 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ FDP023N08B.PDF Datasheet ] | |
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