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FDP100N10 데이터시트 PDF




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부품번호 FDP100N10 기능
기능 MOSFET ( Transistor )
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FDP100N10 데이터시트, 핀배열, 회로
FDP100N10
N-Channel PowerTrench® MOSFET
100 V, 75 A, 10 mΩ
November 2013
Features
• RDS(on) = 8.2 mΩ (Typ.) @ VGS = 10 V, ID = 75 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
• Micor Solar Inverter
D
GDS TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 75oC)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDP100N10
100
±20
75
300
365
6
208
1.4
-55 to +175
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP100N10
0.72
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2007 Fairchild Semiconductor Corporation
FDP100N10 Rev. C3
1
www.fairchildsemi.com




FDP100N10 pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
*Notes:
1. VGS = 0V
2. ID = 250μA
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
500
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
*Notes:
1. VGS = 10V
2. ID = 75A
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
100
100 80
10
1
0.1
0.1
100 μs
60
THIS AREA IS
LIMITED BY rDS(on)
40
SINGLE PULSE
TJ = MAX RATED
RθJc = 0.72 oC/W
Tc = 25 oC
1 ms
10 ms
100 ms
DC
1 10 100
VDS, DRAIN to SOURCE VOLTAGE (V)
400
20
0
25 50 75 100 125 150
TC, Case Temperature [oC]
Figure 11. Transient Thermal Response Curve
175
1
0.5
0.2
0.1
0.1
0.05 PDM
0.01
0.02
0.01
Single pulse
t1
t2
*Notes:
1. ZθJC(t) = 0.72oC/W Max.
2. Duty Factor, D=t1/t2
1E-3
3. TJM - TC = PDM * ZθJC(t)
10-5 10-4 10-3 10-2 10-1 100
tR1,eRcetactnagnuglualrarPPuulslseeDDuurraattiioonn [[sseecc]]
©2007 Fairchild Semiconductor Corporation
FDP100N10 Rev. C3
4
www.fairchildsemi.com

4페이지










FDP100N10 전자부품, 판매, 대치품
Mechanical Dimensions
Figure 16. TO-220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003
©2007 Fairchild Semiconductor Corporation
FDP100N10 Rev. C3
7
www.fairchildsemi.com

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FDP100N10

MOSFET ( Transistor )

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