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FDPF045N10A 데이터시트 PDF




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부품번호 FDPF045N10A 기능
기능 MOSFET ( Transistor )
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FDPF045N10A 데이터시트, 핀배열, 회로
August 2014
FDPF045N10A
N-Channel PowerTrench® MOSFET
100 V, 67 A, 4.5 mΩ
Features
• RDS(on) = 3.7 mΩ ( Typ.)@ VGS = 10 V, ID = 67 A
• Fast Switching Speed
• Low Gate Charge, QG = 57 nC(Typ.)
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor®’s advance PowerTrench® process that has
been tailored to minimize the on-state resistance while maintain-
ing superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
D
G
DS
TO-220F
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,1/8” from Case for 5 Seconds
FDPF045N10A
100
±20
67
47
268
637
6.0
43
0.29
-55 to +175
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDPF045N10A
3.5
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDPF045N10A Rev. C3
1
www.fairchildsemi.com




FDPF045N10A pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.10
1.05
1.00
0.95
0.90
-100
*Notes:
1. VGS = 0V
2. ID = 250μA
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
vs. Case Temperature
500
100 100μs
10
1ms
Operation in This Area
1 is Limited by R DS(on)
10ms
100ms
0.1
0.01
0.001
0.1
*Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
DC
1 10 100 200
VDS, Drain-Source Voltage [V]
Figure 11. Eoss vs. Drain to Source Voltage
5
4
3
2
1
0
0 25 50 75 100
VDS, Drain to Source Voltage [V]
Figure 8. On-Resistance Variation
vs. Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-100
*Notes:
1. VGS = 10V
2. ID = 67A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
75
VGS = 10V
60
45
30
15
RθJC = 3.5oC/W
0
25 50 75 100 125 150
TC, Case Temperature [oC]
175
©2011 Fairchild Semiconductor Corporation
FDPF045N10A Rev. C3
4
www.fairchildsemi.com

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FDPF045N10A 전자부품, 판매, 대치품
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --G--a--t-e--P---u-l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDPF045N10A Rev. C3
7
www.fairchildsemi.com

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FDPF045N10A

MOSFET ( Transistor )

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