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부품번호 | FDPF035N06B 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 10 페이지수
FDPF035N06B
N-Channel PowerTrench® MOSFET
60 V, 88 A, 3.5 mΩ
November 2013
Features
• RDS(on) = 2.91 mΩ ( Typ.) @ VGS = 10 V, ID = 88 A
• Low FOM RDS(on)*QG
• Low Reverse Recovery Charge, Qrr
• Soft Reverse Recovery Body Diode
• Enables Highly Efficiency in Synchronous Rectification
• Fast Switching Speed
• 100% UIL Tested
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
• Renewable System
D
GDS
TO-220F
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDPF035N06B_F152
60
±20
88
62
352
600
6.0
46.3
0.31
-55 to +175
300
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDPF035N06B_F152
3.24
62.5
Unit
oC/W
©2013 Fairchild Semiconductor Corporation
FDPF035N06B Rev. C1
1
www.fairchildsemi.com
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.10
1.05
1.00
0.95
0.90
-100
*Notes:
1. VGS = 0V
2. ID = 250μA
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
1000
100
10
Operation in This Area
1 is Limited by R DS(on)
100μs
1ms
10ms
100ms
DC
0.1
0.01
0.1
SINGLE PULSE
TC = 25oC
TJ = 175oC
RθJC = 3.24oC/W
1 10
VDS, Drain-Source Voltage [V]
100
Figure 11. Eoss vs. Drain to Source Voltage
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
10 20 30 40 50
VDS, Drain to Source Voltage [V]
60
Figure 8. On-Resistance Variation
vs. Temperature
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-100
*Notes:
1. VGS = 10V
2. ID = 88A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
100
VGS = 10V
80
60
40
20
RθJC = 3.24oC/W
0
25 50 75 100 125 150
TC, Case Temperature [oC]
175
Figure 12. Unclamped Inductive
Switching Capability
200
100
TJ = 25 oC
10 TJ = 150 oC
01.001
0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE (ms)
1000
©2013 Fairchild Semiconductor Corporation
FDPF035N06B Rev. C1
4
www.fairchildsemi.com
4페이지 DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2013 Fairchild Semiconductor Corporation
FDPF035N06B Rev. C1
7
www.fairchildsemi.com
7페이지 | |||
구 성 | 총 10 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
FDPF035N06B | MOSFET ( Transistor ) | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |