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PDF FDMS0310S Data sheet ( Hoja de datos )
| Número de pieza | FDMS0310S | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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FDMS0310S
N-Channel PowerTrench® SyncFETTM
30 V, 42 A, 4 mΩ
Features
General Description
January 2015
Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 18 A
Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 14 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
SyncFETTM Schottky Body Diode
MSL1 robust package design
The FDMS0310S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
100% UIL tested
Synchronous Rectifier for DC/DC Converters
RoHS Compliant
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Desktop
Top
Bottom
Pin 1
S D5
4G
SSG
D6
3S
Power 56
D
DDD
D7
D8
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VDSt
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Drain to Source Transient Voltage ( tTransient < 100 ns)
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
33
±20
42
83
19
90
60
46
2.5
-55 to +150
Units
V
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
2.7
50
°C/W
Device Marking
FDMS0310S
Device
FDMS0310S
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMS0310S Rev.C3
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.001
0.0001
10-4
SINGLE PULSE
RθJA = 125 oC/W
10-3
10-2
10-1 1
t, RECTANGULAR PULSE DURATION (sec)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10 100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
FDMS0310S Rev.C3
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDMS0310S.PDF ] | |
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