|
|
|
부품번호 | FDMS3620S 기능 |
|
|
기능 | MOSFET ( Transistor ) | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 13 페이지수
July 2012
FDMS3620S
PowerTrench® PowerStage
25V Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel
Max rDS(on) = 4.7 mΩ at VGS = 10 V, ID = 17.5 A
Max rDS(on) = 5.5 mΩ at VGS = 4.5 V, ID = 16 A
Q2: N-Channel
Max rDS(on) = 1.0 mΩ at VGS = 10 V, ID = 38 A
Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 35 A
Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing
RoHS Compliant
General Description
This device includes two specialized N-Channel MOSFETs in a
dual PQFN package. The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFET (Q2) have been designed to provide optimal power
efficiency.
Applications
Computing
Communications
General Purpose Point of Load
Notebook VCORE
Pin 1
Pin 1
G1 D1 D1 D1
D1
S2 5
Q2
4 D1
PHASE
(S1/D2)
G2S2
S2 S2
Top Power 56
Bottom
S2 6
S2 7
G2 8
PHASE
3 D1
2 D1
Q1 1 G1
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
TC = 25 °C
TC = 25 °C
TA = 25 °C
(Note 3)
TA = 25 °C
TA = 25 °C
Q1 Q2
25 25
±12 ±12
30 49
76
17.51a
211
381b
70 150
29
2.21a
1.01c
135
2.51b
1.01d
-55 to +150
Units
V
V
A
mJ
W
°C
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
571a
1251c
3.0
501b
1201d
1.7
°C/W
Device Marking
08OD
06OD
Device
FDMS3620S
Package
Power 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS3620S Rev.C1
1
www.fairchildsemi.com
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
70
60
50
40
30
20
10
0
0.0
VGS = 10 V
VGS = 4.5 V
VGS = 3.5 V
VGS = 3 V
VGS = 2.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.3 0.6 0.9 1.2
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.5
Figure 1. On Region Characteristics
3.0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
2.5
VGS = 2.5 V
2.0
1.5
VGS = 3 V
1.0
0.5
0
VGS = 3.5 V VGS = 4.5 V VGS = 10 V
10 20 30 40 50 60 70
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
ID = 17.5 A
1.6 VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
20
ID = 17.5 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
16
12
8
TJ = 125 oC
4
TJ = 25 oC
0
2 3 4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
70
PULSE DURATION = 80 μs
60 DUTY CYCLE = 0.5% MAX
VDS = 5 V
50
40
TJ = 150 oC
30
TJ = 25 oC
20
TJ = -55 oC
10
0
0.5 1.0 1.5 2.0 2.5 3.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
70
VGS = 0 V
10
TJ = 150 oC
1
0.1
0.01
TJ = 25 oC
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2012 Fairchild Semiconductor Corporation
FDMS3620S Rev.C1
4
www.fairchildsemi.com
4페이지 Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted
150
VGS = 10 V
VGS = 4.5 V
120 VGS = 3.5 V
VGS = 3 V
90
VGS = 2.5 V
60
30
0
0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.3 0.6
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.9
Figure 14. On-Region Characteristics
6
5
VGS = 2.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4
3
VGS = 3 V
2 VGS = 3.5 V
1
VGS = 4.5 V
VGS = 10 V
0
0 30 60 90 120 150
ID, DRAIN CURRENT (A)
Figure 15. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.6
ID = 38 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 16. Normalized On-Resistance
vs Junction Temperature
5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4
ID = 38 A
3
2
TJ = 125 oC
1
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs Gate to
Source Voltage
10
150
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
120
VDS = 5 V
90
TJ = 150 oC
60
TJ = 25 oC
30
0
1.0
TJ = -55 oC
1.5 2.0 2.5
VGS, GATE TO SOURCE VOLTAGE (V)
3.0
Figure 18. Transfer Characteristics
©2012 Fairchild Semiconductor Corporation
FDMS3620S Rev.C1
7
200
100 VGS = 0 V
TJ = 150 oC
10
TJ = 25 oC
1
TJ = -55 oC
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 19. Source to Drain Diode
Forward Voltage vs Source Current
www.fairchildsemi.com
7페이지 | |||
구 성 | 총 13 페이지수 | ||
다운로드 | [ FDMS3620S.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FDMS3620S | MOSFET ( Transistor ) | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |