Datasheet.kr   

FDMS3664S 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FDMS3664S은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 FDMS3664S 자료 제공

부품번호 FDMS3664S 기능
기능 MOSFET ( Transistor )
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


FDMS3664S 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 16 페이지수

미리보기를 사용할 수 없습니다

FDMS3664S 데이터시트, 핀배열, 회로
FDMS3664S
PowerTrench® Power Stage
January 2015
Asymmetric Dual N-Channel MOSFET
Features
General Description
Q1: N-Channel
„ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
„ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
Q2: N-Channel
„ Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 25 A
„ Max rDS(on) = 3.2 mΩ at VGS = 4.5 V, ID = 22 A
„ Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
„ MOSFET integration enables optimum layout for
lower circuit inductance and reduced switch node
ringing
„ RoHS Compliant
This device includes two specialized N-Channel MOSFETs in a
dual PQFN package. The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFETTM (Q2) have been designed to provide optimal power
efficiency.
Applications
„ Computing
„ Communications
„ General Purpose Point of Load
„ Notebook VCORE
Pin 1
Pin 1
G1
D1
D1
D1
D1
S2 5
Q2
4 D1
PHASE
(S1/D2)
G2
S2
S2
S2
Top Power 56 Bottom
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
S2 6
S2 7
G2 8
PHASE
3 D1
2 D1
Q1 1 G1
Symbol
VDS
VDSt
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Drain to Source Transient Voltage ( tTransient < 100 ns)
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 3)
TC = 25 °C
TC = 25 °C
TA = 25 °C
TA = 25 °C
TA = 25 °C
Q1 Q2
30 30
33 33
±20 ±12
30 60
60
131a
118
251b
40
334
2.21a
11c
100
485
2.51b
11d
-55 to +150
Units
V
V
V
A
mJ
W
°C
Thermal Characteristics
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
571a
1251c
2.9
501b
1201d
2.3
°C/W
Device Marking
22CF
10OD
Device
FDMS3664S
Package
Power 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS3664S Rev.C5
1
www.fairchildsemi.com




FDMS3664S pdf, 반도체, 판매, 대치품
Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
40
VGS = 10 V
30
VGS = 6 V
VGS = 4.5 V
20
VGS = 4 V
VGS = 3.5 V
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0 0.2 0.4 0.6 0.8
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1.0
4
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
3
VGS = 3.5 V
2 VGS = 4 V
1
VGS = 4.5 V VGS = 6 V VGS = 10 V
0
0 10 20 30 40
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 13 A
VGS = 10 V
1.4
1.2
1.0
20
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
16
ID = 13 A
12
TJ = 125 oC
8
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
4
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
40
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
30
VDS = 5 V
TJ = 150 oC
20
10
TJ = 25 oC
TJ = -55 oC
0
1.5 2.0 2.5 3.0 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
4.0
40
VGS = 0 V
10
TJ = 150 oC
1
0.1 TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2012 Fairchild Semiconductor Corporation
FDMS3664S Rev.C5
4
www.fairchildsemi.com

4페이지










FDMS3664S 전자부품, 판매, 대치품
Typical Characteristics (Q2 N-Channel) TJ = 25 oC unlenss otherwise noted
100
VGS = 10 V
80
VGS = 4.5 V
60
VGS = 4 V
VGS = 3.5 V
40
VGS = 3 V
20
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0 0.2 0.4 0.6 0.8
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 14. On-Region Characteristics
4
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
3
VGS = 3 V
2
VGS = 3.5 V
1
VGS = 4 V VGS = 4.5 V VGS = 10 V
0
0 20 40 60 80 100
ID, DRAIN CURRENT (A)
Figure 15. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.6
ID = 25 A
VGS = 10 V
1.4
1.2
1.0
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
8
ID = 25 A
6
TJ = 125 oC
4
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 16. Normalized On-Resistance
vs Junction Temperature
2
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs Gate to
Source Voltage
10
100
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
80
VDS = 5 V
60
TJ = 125 oC
40
TJ = 25 oC
20
0
1.0
TJ = -55 oC
1.5 2.0 2.5
VGS, GATE TO SOURCE VOLTAGE (V)
3.0
Figure 18. Transfer Characteristics
100
VGS = 0 V
10
TJ = 125 oC
1
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 19. Source to Drain Diode
Forward Voltage vs Source Current
1.0
©2012 Fairchild Semiconductor Corporation
FDMS3664S Rev.C5
7
www.fairchildsemi.com

7페이지


구       성 총 16 페이지수
다운로드[ FDMS3664S.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
FDMS3664S

MOSFET ( Transistor )

Fairchild Semiconductor
Fairchild Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵