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부품번호 | FDMS3664S 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 16 페이지수
FDMS3664S
PowerTrench® Power Stage
January 2015
Asymmetric Dual N-Channel MOSFET
Features
General Description
Q1: N-Channel
Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
Q2: N-Channel
Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 25 A
Max rDS(on) = 3.2 mΩ at VGS = 4.5 V, ID = 22 A
Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for
lower circuit inductance and reduced switch node
ringing
RoHS Compliant
This device includes two specialized N-Channel MOSFETs in a
dual PQFN package. The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFETTM (Q2) have been designed to provide optimal power
efficiency.
Applications
Computing
Communications
General Purpose Point of Load
Notebook VCORE
Pin 1
Pin 1
G1
D1
D1
D1
D1
S2 5
Q2
4 D1
PHASE
(S1/D2)
G2
S2
S2
S2
Top Power 56 Bottom
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
S2 6
S2 7
G2 8
PHASE
3 D1
2 D1
Q1 1 G1
Symbol
VDS
VDSt
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Drain to Source Transient Voltage ( tTransient < 100 ns)
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 3)
TC = 25 °C
TC = 25 °C
TA = 25 °C
TA = 25 °C
TA = 25 °C
Q1 Q2
30 30
33 33
±20 ±12
30 60
60
131a
118
251b
40
334
2.21a
11c
100
485
2.51b
11d
-55 to +150
Units
V
V
V
A
mJ
W
°C
Thermal Characteristics
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
571a
1251c
2.9
501b
1201d
2.3
°C/W
Device Marking
22CF
10OD
Device
FDMS3664S
Package
Power 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS3664S Rev.C5
1
www.fairchildsemi.com
Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
40
VGS = 10 V
30
VGS = 6 V
VGS = 4.5 V
20
VGS = 4 V
VGS = 3.5 V
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0 0.2 0.4 0.6 0.8
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1.0
4
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
3
VGS = 3.5 V
2 VGS = 4 V
1
VGS = 4.5 V VGS = 6 V VGS = 10 V
0
0 10 20 30 40
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 13 A
VGS = 10 V
1.4
1.2
1.0
20
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
16
ID = 13 A
12
TJ = 125 oC
8
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
4
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
40
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
30
VDS = 5 V
TJ = 150 oC
20
10
TJ = 25 oC
TJ = -55 oC
0
1.5 2.0 2.5 3.0 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
4.0
40
VGS = 0 V
10
TJ = 150 oC
1
0.1 TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2012 Fairchild Semiconductor Corporation
FDMS3664S Rev.C5
4
www.fairchildsemi.com
4페이지 Typical Characteristics (Q2 N-Channel) TJ = 25 oC unlenss otherwise noted
100
VGS = 10 V
80
VGS = 4.5 V
60
VGS = 4 V
VGS = 3.5 V
40
VGS = 3 V
20
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0 0.2 0.4 0.6 0.8
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 14. On-Region Characteristics
4
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
3
VGS = 3 V
2
VGS = 3.5 V
1
VGS = 4 V VGS = 4.5 V VGS = 10 V
0
0 20 40 60 80 100
ID, DRAIN CURRENT (A)
Figure 15. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.6
ID = 25 A
VGS = 10 V
1.4
1.2
1.0
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
8
ID = 25 A
6
TJ = 125 oC
4
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 16. Normalized On-Resistance
vs Junction Temperature
2
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs Gate to
Source Voltage
10
100
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
80
VDS = 5 V
60
TJ = 125 oC
40
TJ = 25 oC
20
0
1.0
TJ = -55 oC
1.5 2.0 2.5
VGS, GATE TO SOURCE VOLTAGE (V)
3.0
Figure 18. Transfer Characteristics
100
VGS = 0 V
10
TJ = 125 oC
1
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 19. Source to Drain Diode
Forward Voltage vs Source Current
1.0
©2012 Fairchild Semiconductor Corporation
FDMS3664S Rev.C5
7
www.fairchildsemi.com
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FDMS3664S | MOSFET ( Transistor ) | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |