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PDF FDS6699S Data sheet ( Hoja de datos )
| Número de pieza | FDS6699S | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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FDS6699S
30V N-Channel PowerTrench® SyncFET™
December 2012
Features
■ 21 A, 30 V Max RDS(ON) = 3.6 mΩ @ VGS = 10 V
Max RDS(ON) = 4.5 mΩ @ VGS = 4.5 V
■ Includes SyncFET Schottky body diode
■ High performance trench technology for extremely low
RDS(ON) and fast switching
■ High power and current handling capability
■ 100% RG (Gate Resistance) tested
Applications
■ Synchronous Rectifier for DC/DC Converters –
■ Notebook Vcore low side switch
■ Point of Load low side switch
General Description
The FDS6699S is designed to replace a single SO-8 MOSFET
and Schottky diode in synchronous DC:DC power supplies.
This 30V MOSFET is designed to maximize power conversion
efficiency, providing a low RDS(ON) and low gate charge. The
FDS6699S includes an integrated Schottky diode using Fair-
child’s monolithic SyncFET technology.
D
D
D
D
SO-8
G
SS
S
54
63
72
81
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
EAS
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
(Note 1a)
(Note 4)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Ratings
30
±20
21
105
541
2.5
1.2
1
–55 to +150
50
25
Package Marking and Ordering Information
Device Marking
FDS6699S
Device
FDS6699S
Reel Size
13’’
Tape width
12mm
Units
V
V
A
mJ
W
°C
°C/W
Quantity
2500 units
©2012 Fairchild Semiconductor Corporation
FDS6699S Rev. D33
1
www.fairchildsemi.com
1 page  
Typical Characteristics (continued)
SyncFET Schottky Body Diode Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in paral-
lel with PowerTrench MOSFET. This diode exhibits similar char-
acteristics to a discrete external Schottky diode in parallel with a
MOSFET. Figure 12 shows the reverse recovery characteristic
of the FDS6699S.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
0.1
0.01
0.001
TA = 125 oC
TA = 100 oC
TIME : 12.5ns/div
Figure 12. FDS6699S SyncFET body
diode reverse recovery characteristic.
0.0001
0.00001
0
TA = 25oC
5 10 15 20
VDS, REVERSE VOLTAGE (V)
25
30
Figure 13. SyncFET body diode reverse leakage
versus drain-source voltage and temperature.
FDS6699S Rev. D3
5 www.fairchildsemi.com
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