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FDS6990AS 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FDS6990AS은 전자 산업 및 응용 분야에서
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부품번호 FDS6990AS 기능
기능 MOSFET ( Transistor )
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FDS6990AS 데이터시트, 핀배열, 회로
M
FDS6990AS
Dual 30V N-Channel PowerTrench® SyncFET™
March 2010
Features
7.5 A, 30 V. RDS(ON) = 22 m@ VGS = 10 V
RDS(ON) = 28 m@ VGS = 4.5 V
Includes SyncFET Schottky diode
Low gate charge (10nC typical)
High performance trench technology for extremely low
RDS(ON)
High power and current handling capability
Applications
DC/DC converter
Motor drives
General Description
The FDS6990AS is designed to replace a dual SO-8 MOSFET
and two Schottky diodes in synchronous DC:DC power sup-
plies. This 30V MOSFET is designed to maximize power con-
version efficiency, providing a low RDS(ON) and low gate charge.
Each MOSFET includes integrated Schottky diodes using Fair-
child’s monolithic SyncFET technology. The performance of the
FDS6990AS as the low-side switch in a synchronous rectifier is
similar to the performance of the FDS6990A in parallel with a
Schottky diode.
D1
D1
D2
D2
SO-8
Pin 1
G1
S1
G2
S2
5
Q1
6
7 Q2
8
4
3
2
1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Ratings
30
±20
7.5
20
2
1.6
1
0.9
–55 to +150
78
40
Package Marking and Ordering Information
Device Marking
FDS6990AS
Device
FDS6990AS
Reel Size
13"
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2010 Fairchild Semiconductor Corporation
FDS6990AS Rev. A2
1
www.fairchildsemi.com




FDS6990AS pdf, 반도체, 판매, 대치품
Typical Characteristics
20
VGS = 10V
4.5V
15
10
3.5V
4.0V
3.0V
5
2.5V
0
0 0.5 1 1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2
1.6
ID = 7.5A
VGS = 10V
1.4
1.2
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
20
VDS = 5V
16
2
VGS = 3.0V
1.8
1.6
3.5V
1.4
4.0V
1.2
4.5V
5.0V
1
6.0V
10V
0.8
0
4 8 12 16
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
20
0.07
ID = 3.75A
0.06
0.05
0.04
0.03
TA = 125 oC
0.02
TA = 25 oC
0.01
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
100
VGS = 0V
10
12
8
4
0
1.5
TA = 125 oC
-55oC
25oC
2 2.5 3
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3.5
1
TA = 125 oC
0.1
25 oC
0.01
-55oC
0.001
0
0.2 0.4 0.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
0.8
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6990AS Rev. A2
4
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FDS6990AS 전자부품, 판매, 대치품
Typical Characteristics (continued)
VDS
VGS
RGE
L
DUT
0V
VGS
tp
vary tP to obtain
required peak IAS
IAS
0.01
+
VDD
Figure 15. Unclamped Inductive
Load Test Circuit
Drain Current
Same type as DUT
+
10V
50k
- 10 F
1F
VGS
DUT
+
VDD
Ig(REF)
Figure 17. Gate Charge Test Circuit
VDS
VGS
RGEN
VGS Pulse Width 1µs
Duty Cycle 0.1%
RL
DUT
+
VDD
Figure 19. Switching Time
Test Circuit
tP
IAS
BVDSS
VDS
VDD
tAV
Figure 16. Unclamped Inductive
Waveforms
10V
VGS
QG(TOT)
QGS
QGD
Charge, (nC)
Figure 18. Gate Charge Waveform
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
0V
VGS
10%
0V
10%
10%
50%
Pulse Width
90%
50%
Figure 20. Switching Time Waveforms
FDS6990AS Rev. A2
7
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