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FDD770N15A 데이터시트 PDF




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부품번호 FDD770N15A 기능
기능 MOSFET ( Transistor )
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FDD770N15A 데이터시트, 핀배열, 회로
April 2015
FDD770N15A
N-Channel PowerTrench® MOSFET
150 V, 18 A, 77 mΩ
Features
• RDS(on) = 61 mΩ ( Typ.) @ VGS = 10 V, ID = 12 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• DC to DC Converters
• Synchronous Rectification for Server / Telecom PSU
• Battery Charger
• AC motor drives and Uninterruptible Power Supplies
• Off-line UPS
D
G
S
D
D-PAK
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
(f > 1 Hz)
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD770N15A
150
±20
±30
18
11.4
36
31.7
6.0
56.8
0.46
-55 to +150
300
FDD770N15A
2.2
87
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2012 Fairchild Semiconductor Corporation
FDD770N15A Rev. 1.2
1
www.fairchildsemi.com




FDD770N15A pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.10
1.05
1.00
0.95
0.90
-80
*Notes:
1. VGS = 0V
2. ID = 250μA
-40 0 40 80 120
TJ, Junction Temperature [oC]
160
Figure 9. Maximum Safe Operating Area
60
Figure 8. On-Resistance Variation
vs. Temperature
2.4
2.0
1.6
1.2
0.8
0.4
-80
*Notes:
1. VGS = 10V
2. ID = 12A
-40 0
40 80 120
TJ, Junction Temperature [oC]
160
Figure 10. Maximum Drain Current
vs. Case Temperature
20
10 100μs
1 Operation in This Area
is Limited by R DS(on)
1ms
10ms
100ms
DC
0.1
0.01
1
SINGLE PULSE
TC = 25oC
TJ = 150oC
RθJC = 2.2oC/W
10 100
VDS, Drain-Source Voltage [V]
200
Figure 11. Eoss vs. Drain to Source Voltage
0.8
15
VGS = 10V
10
5
RθJC = 2.2oC/W
0
25 50 75 100 125
TC, Case Temperature [oC]
150
Figure 12. Unclamped Inductive
Switching Capability
20
0.6 10
TJ = 25 oC
0.4
TJ = 125 oC
0.2
0.0
0
25 50 75 100 125
VDS, Drain to Source Voltage [V]
150
©2012 Fairchild Semiconductor Corporation
FDD770N15A Rev. 1.2
4
1
0.001
0.01 0.1
1
tAV, TIME IN AVALANCHE (ms)
10
www.fairchildsemi.com

4페이지










FDD770N15A 전자부품, 판매, 대치품
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2012 Fairchild Semiconductor Corporation
FDD770N15A Rev. 1.2
7
www.fairchildsemi.com

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FDD770N15A

MOSFET ( Transistor )

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