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기능 MOSFET ( Transistor )
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FDD5N50NZF 데이터시트, 핀배열, 회로
FDD5N50NZF
N-Channel UniFETTM FRFET® MOSFET
500 V, 3.7 A, 1.75 Ω
November 2013
Features
• RDS(on) = 1.47 Ω (Typ.) @ VGS = 10 V, ID = 1.85 A
• Low Gate Charge (Typ. 9 nC)
• Low Crss (Typ. 4 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. The body diode’s reverse recovery performance of
UniFET II FRFET® MOSFET has been enhanced by lifetime
control. Its trr is less than 100nsec and the reverse dv/dt immu-
nity is 15V/ns while normal planar MOSFETs have over
200nsec and 4.5V/nsec respectively. Therefore, it can remove
additional component and improve system reliability in certain
applications in which the performance of MOSFET’s body diode
is significant. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
D
G
S
D
D-PAK
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD5N50NZFTM
500
±25
3.7
2.2
14
165
3.3
6.25
20
62.5
0.5
-55 to +150
300
FDD5N50NZFTM
2
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©209 Fairchild Semiconductor Corporation
FDD5N50NZF Rev. C1
1
www.fairchildsemi.com




FDD5N50NZF pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.15
1.10
1.05
1.00
0.95
*Notes:
1. VGS = 0V
2. ID = 250μA
0.90
-75 -50 0 50 100
TJ, Junction Temperature [oC]
150
Figure 8. Maximum Safe Operating Area
20
30μs
10
100μs
1ms
1
Operation in This Area
is Limited by R DS(on)
10ms
DC
0.1
0.01
1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
10 100
VDS, Drain-Source Voltage [V]
1000
Figure 9. Maximum Drain Current
vs. Case Temperature
5
4
3
2
1
0
25 50 75 100 125 150
TC, Case Temperature [oC]
Figure 10. Transient Thermal Response Curve
2
1 0.5
0.2
0.1
0.05
0.1
0.02
0.01
Single pulse
0.01
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 2oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
Rt1e, cRteacntganuglaurlaPruPlusleseDDuuraratitoionn[[sseecc]]
10-1
1
©2009 Fairchild Semiconductor Corporation
FDD5N50NZF Rev. C1
4
www.fairchildsemi.com

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FDD5N50NZF 전자부품, 판매, 대치품
Mechanical Dimensions
Figure 15. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003
©2009 Fairchild Semiconductor Corporation
FDD5N50NZF Rev. C1
7
www.fairchildsemi.com

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FDD5N50NZ

MOSFET ( Transistor )

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FDD5N50NZF

MOSFET ( Transistor )

Fairchild Semiconductor
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