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Datasheet 3DG8 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 3DG8 | NPN Silicon High Frequency Low Power Transistor 3DG8
NPN Silicon High Frequency Low Power Transistor
Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power sour |  Shaanxi Qunli Electric | transistor |
| 2 | 3DG8050 | NPN EPITAXIAL SILICON TRANSISTOR NPN 硅外延晶体管 NPN EPITAXIAL SILICON TRANSISTOR
R
3DG8050
主要参数 MAIN CHARACTERISTICS
封装 Package
IC VCEO PC
1.5A 25V 1W
用途
APPLICATIONS
z 高频开关电源
z High frequency switching power
supply
z 高频功率变换
z High frequency power transform
z 一般功率� |  JILIN SINO | transistor |
| 3 | 3DG8050M | SILICON NPN TRANSISTOR S8050M(3DG8050M)
硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于功率放大电路。/Purpose: Power amplifier applications. 特点:与 S8550M(3CG8550M)互补。/Features: Complementary pair with S8550M(3CG8550M).
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号
数� |  FOSHAN BLUE ROCKET | transistor |
| 4 | 3DG8051 | NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
3DG8051 TRANSISTOR (NPN)
FEATURES z General Purpose Switching Application z Complementary to 3CG8551
TO – 92L
1. EMITTER 2. COLLECTOR 3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO |  JCET | transistor |
| 5 | 3DG8051 | TO-92L Plastic-Encapsulate Transistors |  TY Semiconductor | transistor |
3DG Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 3DG100 | NPN Silicon High Frequency Low Power Transistor Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DG100, 3DG102
NPN Silicon High Frequency Low Power Transistor
Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use  Shaanxi Qunli transistor | | |
| 2 | 3DG1008 | SILICON NPN TRANSISTOR CSD18504Q5A
www.ti.com SLPS366 – JUNE 2012
40V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD18504Q5A
1
FEATURES
Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY  LZG transistor | | |
| 3 | 3DG101 | Silicon NPN high frequency low power transistor 3DG101 型 NPN 硅高频小功率晶体管
参数符号
测试条件
PCM 极 限 ICM 值 Tjm
Tstg V(BR)CBO V(BR)CEO V(BR)EBO 直 ICBO 流 ICEO 参 IEBO 数 VBEsat VCEsat
hFE
交 流 fT
参 数
ICB=0.1mA ICE=0.1mA IEB=0.1mA VCB=10V VCE=10V VEB=1.5V IC=10mA
IB=1mA VCE=10V
IC=0.5mA VCE=10V
IC=3mA
f  ETC transistor | | |
| 4 | 3DG101 | NPN Silicon High Frequency Low Power Transistor 3DG101, 3DG110, 3DG111
NPN Silicon High Frequency Low Power Transistor
Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplificati  Qunli Electric transistor | | |
| 5 | 3DG102 | NPN Silicon High Frequency Low Power Transistor Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DG100, 3DG102
NPN Silicon High Frequency Low Power Transistor
Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use Shaanxi Qunli transistor | | |
| 6 | 3DG110 | NPN Silicon High Frequency Low Power Transistor 3DG101, 3DG110, 3DG111
NPN Silicon High Frequency Low Power Transistor
Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplificati Qunli Electric transistor | | |
| 7 | 3DG111 | NPN Silicon High Frequency Low Power Transistor 3DG101, 3DG110, 3DG111
NPN Silicon High Frequency Low Power Transistor
Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplificati Qunli Electric transistor | |
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