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Datasheet SUN04A65IS Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1SUN04A65ISNew Generation N-Ch Power MOSFET

SUN04A65IS New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=2.4Ω (Typ.)  Low gate charge: Qg=12nC (Typ.)  Low reverse transfer capacitance: Crss=6pF (Typ.)  Lower EMI noise  RoHS compliant device  100% avalanche
AUK
AUK		mosfet


SUN Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1SUN02A60FNew Generation N-Ch Power MOSFET

SUN02A60F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=3.9Ω (Typ.)  Low gate charge: Qg=7.5nC (Typ.)  Low reverse transfer capacitance: Crss=5pF (Typ.)  Lower EMI noise  RoHS compliant device  100% avalanche
AUK
AUK		mosfet
2SUN04A60FNew Generation N-Ch Power MOSFET

SUN04A60F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=2.1Ω (Typ.)  Low gate charge: Qg=12nC (Typ.)  Low reverse transfer capacitance: Crss=6.3pF (Typ.)  Lower EMI noise  RoHS compliant device  100% avalanch
AUK
AUK		mosfet
3SUN04A65FNew Generation N-Ch Power MOSFET

SUN04A65F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=2.4Ω (Typ.)  Low gate charge: Qg=12nC (Typ.)  Low reverse transfer capacitance: Crss=6pF (Typ.)  Lower EMI noise  RoHS compliant device  100% avalanche
AUK
AUK		mosfet
4SUN04A65ISNew Generation N-Ch Power MOSFET

SUN04A65IS New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=2.4Ω (Typ.)  Low gate charge: Qg=12nC (Typ.)  Low reverse transfer capacitance: Crss=6pF (Typ.)  Lower EMI noise  RoHS compliant device  100% avalanche
AUK
AUK		mosfet
5SUN0550DAdvanced N-Ch Power MOSFET

SUN0550D Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=1.23Ω (Typ.)  Low gate charge: Qg=10.5nC (Typ.)  Low reverse transfer capacitance: Crss=2pF (Typ.)  Halogen free device and RoHS compliant device  100% avalanche
AUK
AUK		mosfet
6SUN0550FAdvanced N-Ch Power MOSFET

SUN0550F Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=1.23Ω (Typ.)  Low gate charge: Qg=10.5nC (Typ.)  Low reverse transfer capacitance: Crss=2pF (Typ.)  RoHS compliant device  100% avalanche tested Ordering Informa
AUK
AUK		mosfet
7SUN07A60FNew Generation N-Ch Power MOSFET

SUN07A60F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=1.05Ω (Typ.)  Low gate charge: Qg=21nC (Typ.)  Low reverse transfer capacitance: Crss=5pF (Typ.)  Lower EMI noise  RoHS compliant device  100% avalanche
AUK
AUK		mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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