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Datasheet P550HVN06.0-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
P55 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | P5503QV | N & P-Channel Enhancement Mode MOSFET P5503QV
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V
RDS(ON) 22mΩ @VGS =10V
-30V
60mΩ @VGS = -10V
ID 7.5A -4.5A
Channel N P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30 V  UNIKC mosfet | | |
| 2 | P5504EDG | P-Channel Enhancement Mode MOSFET P5504EDG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
55mΩ @VGS = -10V
ID -21A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±20
Continuou UNIKC mosfet | | |
| 3 | P5504EDG | P-Channel Logic Level Enhancement NIKO-SEM
P-Channel Enhancement Mode Field Effect Transistor
P5504EDG
TO-252 Halogen-Free & Lead-Free
D
PRODUCT SUMMARY V(BR)DSS -40V RDS(ON) 55mΩ ID -21A
G S
1. GATE 2. DRAIN 3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Volta  Niko-Sem data | | |
| 4 | P5504EVG | P-Channel Enhancement Mode MOSFET P5504EVG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
55mΩ @VGS = -10V
ID -6A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±25
Continuou UNIKC mosfet | | |
| 5 | P5504EVG | P-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor
P5504EVG
SOP-8 Lead-Free
D
PRODUCT SUMMARY V(BR)DSS -40V RDS(ON) 55m ID -5.5A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE
G S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDIT  Niko transistor | | |
| 6 | P5506BDG | N-Channel Enhancement Mode MOSFET P5506BDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 55mΩ @VGS = 10V
ID 22A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Dra UNIKC mosfet | | |
| 7 | P5506BDG | N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM
N-Channel Logic Level Enhancement
P5506BDG
Mode Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60 55mΩ
ID 22A
D G
1.GATE 2.DRAIN 3.SOURCE
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYM Niko transistor | |
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