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FCU3400N80Z 데이터시트 PDF




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부품번호 FCU3400N80Z 기능
기능 MOSFET ( Transistor )
제조업체 Fairchild Semiconductor
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FCU3400N80Z 데이터시트, 핀배열, 회로
March 2015
FCD3400N80Z / FCU3400N80Z
N-Channel SuperFET® II MOSFET
800 V, 2 A, 3.4 Ω
Features
• RDS(on) = 2.75 Ω (Typ.)
• Ultra Low Gate Charge (Typ. Qg = 7.4 nC)
• Low Eoss (Typ. 0.9 uJ @ 400V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 41 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Applications
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. Conse-
quently, SuperFET II MOSFET is very suitable for the switching
power applications such as Audio, Laptop adapter, Lighting,
ATX power and industrial power applications.
• AC - DC Power Supply
• LED Lighting
D
D
G
S
D-PAK
GDS
I-PAK
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
1
S
FCD3400N80Z
FCU3400N80Z
800
±20
±30
2.0
1.2
4.0
12.8
0.4
0.32
100
20
32
0.26
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCD3400N80Z
FCU3400N80Z
3.9
62.5
Unit
oC/W
www.fairchildsemi.com




FCU3400N80Z pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
*Notes:
1. VGS = 0V
2. ID = 1mA
1.1
1.0
0.9
0.8
-100
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
10
10μs
100μs
1
1ms
DC
Operation in This Area
is Limited by R DS(on)
0.1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
1 10
100
VDS, Drain-Source Voltage [V]
1000
Figure 11. Eoss vs. Drain to Source Voltage
2.5
2.0
Figure 8. On-Resistance Variation
vs. Temperature
3.0
*Notes:
2.5
1. VGS = 10V
2. ID = 1A
2.0
1.5
1.0
0.5
0.0
-100
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
2.0
1.5
1.0
0.5
0.0
25
50 75 100 125
TC, Case Temperature [oC]
150
1.5
1.0
0.5
0
0 200 400 600 800
VDS, Drain to Source Voltage [V]
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
4
www.fairchildsemi.com

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FCU3400N80Z 전자부품, 판매, 대치품
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---PW--e-i-dr-ito-h-d-
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Fig 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
7
www.fairchildsemi.com

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FCU3400N80Z

MOSFET ( Transistor )

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