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PDF FCPF400N80Z Data sheet ( Hoja de datos )
| Número de pieza | FCPF400N80Z | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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August 2015
FCPF400N80Z
N-Channel SuperFET® II MOSFET
800 V, 14 A, 400 mΩ
Features
• Typ. RDS(on) = 340 mΩ
• Ultra Low Gate Charge (Typ. Qg = 43 nC)
• Low Eoss (Typ. 4.1 uJ @ 400 V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 138 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Applications
• AC-DC Power Supply
• LED Lighting
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. In addition,
internal gate-source ESD diode allows to withstand over 2kV
HBM surge stress. Consequently, SuperFET II MOSFET is very
suitable for the switching power applications such as Audio,
Laptop adapter, Lighting, ATX power and industrial power appli-
cations.
D
GDS
TO-220F
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature, with heatsink.
S
(f >1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2013 Fairchild Semiconductor Corporation
FCPF400N80Z Rev. 1.4
1
FCPF400N80Z
800
±20
±30
14*
8.9*
33*
339
2.2
0.36
100
20
35.7
0.29
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCPF400N80Z
3.5
62.5
Unit
oC/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
5
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
Single pulse
0.01
0.005
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 3.5oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
100
101
102
t1, Rectangular Pulse Duration [sec]
©2013 Fairchild Semiconductor Corporation
FCPF400N80Z Rev. 1.4
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FCPF400N80Z.PDF ] | |
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