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기능 MOSFET ( Transistor )
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FCPF1300N80Z 데이터시트, 핀배열, 회로
August 2015
FCPF1300N80Z
N-Channel SuperFET® II MOSFET
800 V, 6 A, 1.3 Ω
Features
• RDS(on) = 1.05 Ω (Typ.)
• Ultra Low Gate Charge (Typ. Qg = 16.2 nC)
• Low Eoss (Typ. 1.57 uJ @ 400V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 48.7 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Applications
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. In
addition, internal gate-source ESD diode allows to withstand
over 2kV HBM surge stress. Consequently, SuperFET II
MOSFET is very suitable for the switching power applications
such as Audio, Laptop adapter, Lighting, ATX power and
industrial power applications.
• AC - DC Power Supply
• LED Lighting
D
GDS
TO-220F
D
G
S
TO-220F
Y-formed
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
Parameter
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
- DC
- AC
(f > 1 Hz)
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature, with heatsink.
Thermal Characteristics
FCPF1300N80Z
FCPF1300N80ZYD
800
±20
±30
6.0*
3.8*
12*
48
0.8
0.26
100
20
24
0.19
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Symbol
Parameter
RθJC
RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCPF1300N80Z Rev. 1.2
1
FCPF1300N80Z
FCPF1300N80ZYD
5.2
62.5
Unit
oC/W
www.fairchildsemi.com




FCPF1300N80Z pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
*Notes:
1. VGS = 0V
2. ID = 1mA
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
30
10
1
0.1
0.01
0.1
10μs
100μs
1ms
Operation in This Area
is Limited by R DS(on)
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
10ms
DC
1 10 100
VDS, Drain-Source Voltage [V]
1000
Figure 11. Eoss vs. Drain to Source Voltage
5
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
*Notes:
1. VGS = 10V
2. ID = 2A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
7
6
5
4
3
2
1
0
25 50 75 100 125 150
TC, Case Temperature [oC]
4
3
2
1
0
0 200 400 600 800
VDS, Drain to Source Voltage [V]
©2014 Fairchild Semiconductor Corporation
FCPF1300N80Z Rev. 1.2
4
www.fairchildsemi.com

4페이지










FCPF1300N80Z 전자부품, 판매, 대치품
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2014 Fairchild Semiconductor Corporation
FCPF1300N80Z Rev. 1.2
7
www.fairchildsemi.com

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FCPF1300N80Z

MOSFET ( Transistor )

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