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FCPF4300N80Z 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FCPF4300N80Z은 전자 산업 및 응용 분야에서
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부품번호 FCPF4300N80Z 기능
기능 MOSFET ( Transistor )
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FCPF4300N80Z 데이터시트, 핀배열, 회로
August 2015
FCPF4300N80Z
N-Channel SuperFET® II MOSFET
800 V, 2.2 A, 4.3 Ω
Features
• RDS(on) = 3.4 Ω (Typ.)
• Ultra Low Gate Charge (Typ. Qg = 6.8 nC)
• Low Eoss (Typ. 0.8 uJ @ 400V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 36 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Applications
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. Conse-
quently, SuperFET II MOSFET is very suitable for the switching
power applications such as Audio, Laptop adapter, Lighting,
ATX power and industrial power applications.
• AC - DC Power Supply
• LED Lighting
D
GDS TO-220F
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature, with heatsink.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCPF4300N80Z Rev. 1.1
1
S
FCPF4300N80Z
800
±20
±30
2.2*
1.4*
3.2*
8.2
0.32
0.19
100
20
19.2
0.15
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCPF4300N80Z
6.5
62.5
Unit
oC/W
www.fairchildsemi.com




FCPF4300N80Z pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
*Notes:
1. VGS = 0V
2. ID = 1mA
1.1
1.0
0.9
0.8
-100
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
10
10μs
100μs
1
1ms
Operation in This Area
10ms
0.1 is Limited by R DS(on)
*Notes:
DC
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01 1
10 100
VDS, Drain-Source Voltage [V]
1000
Figure 11. Eoss vs. Drain to Source Voltage
2.4
Figure 8. On-Resistance Variation
vs. Temperature
2.8
*Notes:
1. VGS = 10V
2.4 2. ID = 0.8A
2.0
1.6
1.2
0.8
0.4
-100
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
2.5
2.0
1.5
1.0
0.5
0.0
25
50 75 100 125
TC, Case Temperature [oC]
150
1.8
1.2
0.6
0
0 160 320 480 640 800
VDS, Drain to Source Voltage [V]
©2014 Fairchild Semiconductor Corporation
FCPF4300N80Z Rev. 1.1
4
www.fairchildsemi.com

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FCPF4300N80Z 전자부품, 판매, 대치품
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2014 Fairchild Semiconductor Corporation
FCPF4300N80Z Rev. 1.1
7
www.fairchildsemi.com

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