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기능 MOSFET ( Transistor )
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FQPF2N80YDTU 데이터시트, 핀배열, 회로
FQPF2N80YDTU
N-Channel QFET® MOSFET
80 V, 1.5 A, 
July 2013
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC),
and electronic lamp ballasts.
1.5 A, 80 V, RDS(on)=(Max.)@VGS=10 V, ID=0.75 A
• Low Gate Charge (Typ. 12 nC)
• Low Crss (Typ. 5.5 pF)
• 100% Avalanche Tested
D
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQPF2N80YDTU
800
1.5
0.95
6.0
± 30
5.2
1.5
3.5
4.0
35
0.28
-55 to +150
300
FQPF2N80YDTU
3.57
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2013 Fairchild Semiconductor Corporation
FQPF2N80YDTU Rev. C1
www.fairchildsemi.com




FQPF2N80YDTU pdf, 반도체, 판매, 대치품
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. VGS = 0 V
2. ID = 250 μA
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
101 is Limited by R DS(on)
100μs
1 ms
10 ms
100 100 ms
DC
10-1
10-2
100
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 1.2 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
1.6
1.2
0.8
0.4
0.0
25
50 75 100 125
TC, Case Temperature []
150
Figure 10. Maximum Drain Current
vs Case Temperature
100
1 0 -1
D =0.5
0 .2
0 .1
0 .05
0 .02
0 .01
1 0 -2
1 0 -5
N ote s :
1.
Z
θ
(t)
JC
=
3.57
/W
M ax.
2. D u ty F actor, D =t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Z
θ
(t)
JC
s in g le p u ls e
PDM
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
101
Figure 11. Transient Thermal Response Curve
©2013 Fairchild Semiconductor Corporation
FQPF2N80YDTU Rev. C1
www.fairchildsemi.com

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FQPF2N80YDTU 전자부품, 판매, 대치품
Mechanical Dimensions
TO220Q03
TO-220F 3L - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, Y FORMED LEAD
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify
or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-FA3
Dimensions in Millimeters
©2013 Fairchild Semiconductor Corporation
FQPF2N80YDTU Rev. C1
www.fairchildsemi.com

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