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PDF DMC3021LSD Data sheet ( Hoja de datos )

Número de pieza DMC3021LSD
Descripción COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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DMC3021LSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
Q2
Q1
V(BR)DSS
30V
-30V
RDS(on) max
21mΩ @ VGS = 10V
32mΩ @ VGS = 4.5V
39mΩ @ VGS = -10V
53mΩ @ VGS = -4.5V
ID Max
TA = +25°C
8.5A
7.2A
-7A
-5.6A
Description and
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Power Management Functions
Analog Switch
Load Switch
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair MOSFET
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.072 grams (approximate)
SO-8 D2 D1
Top View
S2
G2
S1
G1
Top View
D2
D2
D1
D1
G2 G1
S2
N-Channel MOSFET
S1
P-Channel MOSFET
Ordering Information (Note 4)
Notes:
Part Number
DMC3021LSD-13
Case
SO-8
Packaging
2500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
85
C3021LD
YY WW
14
Chengdu A/T Site
DMC3021LSD
Document number: DS32152 Rev. 2 - 2
85
C3021LD
YY WW
14
Shanghai A/T Site
= Manufacturer’s Marking
C3021LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1 of 8
www.diodes.com
February 2014
© Diodes Incorporated

1 page




DMC3021LSD pdf
DMC3021LSD
Electrical Characteristics P-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min Typ Max
BVDSS
IDSS
IGSS
-30
——
— -1.0
— ±100
VGS(th)
RDS(ON)
-1
-1.7 -2.2
30 39
42 53
|Yfs| — 7 —
VSD — -0.75 -1.0
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
— 1002 —
— 125 —
— 118 —
— 13 —
— 10.1 —
— 21.1 —
— 2.8 —
— 3.2 —
— 10.1 —
— 6.5 —
— 50.1 —
— 22.2 —
Unit Test Condition
V VGS = 0V, ID = -250μA
µA VDS = -30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = -250μA
mVGS = -10V, ID = -4.3A
VGS = -4.5V, ID = -3.7A
S VDS = -5V, ID = -4.3A
V VGS = 0V, IS = -1.7A
pF
pF
VDS = -10V, VGS = 0V,
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = -15V, ID = -6A
nC
ns
ns VGS = -10V, VDS = -15V,
ns RG = 6, ID = -1A
ns
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
20
VGS = 10V
VGS = 4.5V
15 VGS = 4.0V
VGS = 3.5V
10
VGS = 3.0V
5
0 VGS = 2.5V
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Typical Output Characteristics
20
VDS = 5V
15
10
5 TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
0 TA = -55°C
0 1 2 3 4 56
VGS, GATE SOURCE VOLTAGE (V)
Fig. 12 Typical Transfer Characteristics
DMC3021LSD
Document number: DS32152 Rev. 2 - 2
5 of 8
www.diodes.com
February 2014
© Diodes Incorporated

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