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부품번호 | TMM41256AP-15 기능 |
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기능 | N-channel dynamic RAM | ||
제조업체 | Toshiba | ||
로고 | |||
전체 19 페이지수
TOSHIBA MOS MEMORY PRODUCT
DESCRIPTION
TMM41256AP/AT/AZ-l0, TMM41256AP/AT/AZ-12
TMM41256AP/AT/AZ-15
The THH4l256AP/AT/AZ is the N-channel dynamic RAM organized 262,144 words by 1 bit.
Multiplexed address inputs permit the Ttill4l256AP/AT/AZ to be packaged in a standard 16
pin plastic DIP, 18 pin PLCC and 16 pin ZIP. The package size provides high system bit
densities and is compatible with 'videly available automated testing and insertion equip-
ment. The double layered HOS technology with polycide and poly Si permits the Uill4l256AP/
AT/A~ high speed operation. Also, the advanced circuit techniques have' realized low power
dissipation. System oriented features include single power supply of 5V±lO% tolerance,
direct interfacing capability with high performance logic families such. as schottky TTL.
In addition to the RAS only refresh mode, a CAS before p~s automatic refresh is available.
Another special feature of TMH4l256AP/AT/AZ is page mode, alloHing the user to access at
a high data rate.
FEATURES
• 262,144 words by I bit organization
• Fast access time and cycle time
THM41256AP/AT/AZ-lO/-12/-l5
p~S Access Time
lOOns/120ns/150ns
CAS Access Time
50ns/ 60ns/ 75ns
Cycle Time
190ns/220ns/260ns
• Single power supply of 5V±IO% with a built-
in VBB generator
• Low Pmver:
II/,Orot) MAX. Operating (Tf.il'141256AP/AT/AZ-lO)
385m\~ HAX. Operating (UfrI41256AP/AT/AZ-12)
3301'11'; MAX. Operating (THM41256AP/AT/AZ-15)
28mH HAX. Standby
• Output unlatched at cycle end allows
two-dimensional chip selection
• Common I/O capability using "EARLY
hTRITE" operation
• Read-Modify-Hrite, CAS before RAS
refresh, RAS-only refresh, Hidden
refresh, and Page Mode capability
• All inputs and output TTL compatible
• 256 refresh cycles/4ms
• Package
Plastic DIP
Tf.1H4l256AP
Plastic Leaded Chip Carrier: THM41256AT
Plastic ZIP
TH!141256AZ
PIN CONNECTION (TOP VIEW)
· Plastic Lce . Plastic ZIP
SLOCK DIAGRAr·,
. Plastjc DIP
eAS 1
Vss
AS
DIN
PIN i'lAnES
AO 'V AS
CAS
DIN
DOUT
RAS
\VRITE
VCC
VSS
A5
A7
Vee
Al
All 1
DIU 2
WRITE 3
HAfl 4
AO 5
A2 6
Al 7
Vee 8
Address Inputs
Column Address Strobe
Data In
Data Out
Row Address Strobe
Read/Write Input
Pm.;rer (+5V)
Ground
16 Vs::;
15 CAfl
14 DOUT
13 A6
12 A3
11 A4
10 A5
AO
Al
A2
A:I
A4
A5
A6
A7
AS
- A-13 -
TMM41256AP/AT/AZ-l0, TMM41256AP/AT/AZ-12
TMM41256AP/AT/AZ-15
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Continued)
SYMBOL
PARAMETER
TMM41526AP/ TMM41526AP/ TMM41526AP/
AT/AZ-I0 AT/AZ-12 AT/AZ-15 UNITS NOTES
MIN. MAX. MIN. MAX. MIN. MAX.
tWCR
Write Command Hold Time Reference
to RAS
70
-
85 - 105 - ns
t\\'P Write Command Pulse Hidth
20 -
25 - 30 - ns
tRHL
tC\.JL
tDS
Write Command to RAS Lead Time
\.Jri te Command to CAS Lead Time
Data-In Set-Up Time
25 -
25 -
0-
35 - 45 - ns
35 - 45 - ns
0-
0 - ns 14
tDH Data-In Hold Time
20 -
25 - 30 - ns 14
tDHR
tREF
twcs
Data-In Hold Time Reference
to RAS
Refresh Period
Write Command Set..:.Up Time
70 -
--_.
-4
0-
85 - 105 - ns
- 4-
4 ms
0-
0 - ns 15
tCHD CAS to HRITE Delay
30 -
40 - 50 - ns 15
tRWD RAS to \.JRITE Delay
80 -
100 - 125 - ns 15
tCSR CAS Set-Up Time (CAS before RAS) 10 -
10 - 10 - ns
tCHR CAS Hold Time (CAS before RAS)
30
-
tRPC RAS Precharge to CAS Active Time 0
-
-
30 - 30 - ns
0-
0 - ns
tCPT
CAS Precharge Time (CAS before
RAS Counter Test)
40 -
50 - 60 - ns
CAPACITANCE (TCc=5V:!.10%, f=H1Hz, Ta=O r',70°C)
SYHBOL
PARAHETER
ell Input Capacitance (AO- A8, DIN)
CI2 Input Capacitance (RAS, CAS, '-.TRITE)
--
Co Output Capacitance (D(ll1T)
MIN. MAX. UNITS
-5
- 7 pF
-7
- A-16 -
4페이지 TMM41256AP/AT/AZ-l0, TMM41256AP/AT/AZ-12
TMM41256AP/AT/AZ-15
READ-WRITE/READ-MODIFY-WRITE CYCLE
CA'S
VIH -
-VIL
AO-AS VIH -
VIL _
'WRiTE VIH -
VIL _
DOUT
vOR -
-vOL
-DIN VIH
VIL -
E2Z:] Don It care
- A-19 -
7페이지 | |||
구 성 | 총 19 페이지수 | ||
다운로드 | [ TMM41256AP-15.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
TMM41256AP-10 | N-channel dynamic RAM | Toshiba |
TMM41256AP-12 | N-channel dynamic RAM | Toshiba |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |