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TMM41257AZ-10 데이터시트 PDF




Toshiba에서 제조한 전자 부품 TMM41257AZ-10은 전자 산업 및 응용 분야에서
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부품번호 TMM41257AZ-10 기능
기능 N-channel dynamic RAM
제조업체 Toshiba
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TMM41257AZ-10 데이터시트, 핀배열, 회로
TOSHIBA MOS MEMORY PRODUCT
~~L~~~~4~~~~I~H~CBIT DYNAMIC RAM TMM41257 APIATI AZ-l 0, TMM41257 APIATI AZ-12
N-CHANNEL SILICON GAlE CMOS
TMM41257 AP/AT/AZ-15
DESCRIPTION
*This is advanced information and specifications are subject to
change without notice.
The TMM41257AP/AT/AZ is an N-channel dynamic RAM organized 262,144 words by 1 bit. Multiplexed
address inputs permit the TMM41257AP/AT/AZ to be packaged in a standard 16 pin plastic DIP, 18 pin PLCC and
16 pin ZIP. The package size allows for high system bit densities and is compatible with widely available automated
testing and insertion equipment. The double layered MOS technology with polycide and poly Si permits the
TMM41257AP/AT/AZ high speed operation. Also, the advanced circuit techniques have achieved low power
dissipation. System oriented features include single power supply of 5V±10% tolerance, direct interfacing capability
with high performance logic families such as schottky TTL. In addition to the RAS-only refresh mode, a CAS-before-
RAS automatic refresh is available. Another special feature of the TMM4125 7AP/ AT/ AZ is nibble mode which allows
the user to serially access 4 bits of data at a high data rate.
FEATURES
• 262,144 words by 1 bit organization
• Output unlatched at cycle end al-
• Fast access time and cycle time
lows two-dimensional chip selec-
T~lli4l257AP/AT/AZ-lO/-12/-l5
RAS Access Time
lOOns/120ns/150ns
CAS Access Time
50ns/ 60ns/ 75ns
Cycle Time
190ns/220ns/260ns
Nibble Hode Access Time
25ns/ 30ns/ 40ns
Nibble Mode Cycle Time
50nsj 60ns/ 70ns
tion
• Cornmon I/O capability using
"EARLY WRITE" operation
• Read-Modify-Write, CAS before RAS
refresh, RAS-only refresh, Hidden
refresh, and Nibble Mode capabil-
ity
• Single power supply of 5V±lO% with a built-in VBB • All inputs and output TTL com-
generator
patible
• Low Pm..rer:
• 256 refresh cycles/4ms
440mtJ HAX. Operating (TMM4l257AP/AT/AZ-lO)
• Package
396mW MAX. Operating (T~lli4l257AP/AT/AZ-12)
Plastic DIP
TMM4l257AP
358mW MAX. Operating (T~lli4l257AP/AT/AZ-15)
Plastic Leaded
28mH MAX. Standby
Chip Carrier TMM4l257AT
PIN CONNECTION (TOP VIEW)
Plastic ZIP
TMM4l257AZ
· Plastic LCC
• Plastic ZIP Plastic DIP BLOCK DIAGRA~1
f"'
::>
oO'<DQz' «t"'J.
~
AS
Vss A7
AS Vee
DIN 2
A1
""'-iTCri:riTir....l
AS 1
DIN 2
WlUTE 3
ILW 4.
AO S
A2 S
Vss
CAS
14. DOUT
13 AS
12 A3
11 A4.
Al 10 AS
Vee
PIN NAr~ES
AO '\.0 A8
CAS
DIN
DOUT
RAS
~·1RITE
VCC
VSS
Address Inputs
Column Address Strobe
Data In
Data Out
Row Address Strobe
Read/Hrite Input
Power (+5V)
Ground
AO
A1
A2
A3
to,
AS
AS
A7
AS
ARRAY
- A-51 -




TMM41257AZ-10 pdf, 반도체, 판매, 대치품
TMM41257AP/AT/AZ-l0, TrIIM41257AP/AT/AZ-12
TMM41257AP/AT/AZ-15
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Continued)
SYMBOL
PARAMETER
TMM4l527AP/ TMM4l527AP/ TMM4l527AP/
AT/AZ-10 AT/AZ-12 AT/AZ-15 UNITS NOTES
tDS Data-In Set-Up Time
MIN. MAX. MIN. MAX. MIN. MAX.
0-
0-
0 - ns
tDH Data-In Hold Time
- - -20 25 30 ns
-tDHR Data-In Hold Time Reference to RAS 70
S5 - 105 - ns
tREF Refresh Period
- - -!, !{- 4 ms
twcs Write Command Set-Up Time
0-
0-
0 - ns
tCWD CAS to WRITE Delay Time
30 - 40 - 50 - ns
tRWD RAS to \ffiITE Delay Time
- -SO 100 125 - ns
tNCAS Nibble Mode CAS Pulse Width
25 - 30 - -40 ns
14
14
15
15
15
t NCP Nibble Mode CAS Precharge Time
15 -
tNRRSH Nibble Mode RAS Hold Time (Read)
20 -
-t NWRSH Nibble Mode RAS Hold Time (Write) 40
20 -
25 -
45 -
20 - ns
-30 ns
50 - ns
tNCWD
Nibble Mode CAS to WRITE Delay
Time
25 - 30 - 40 - ns
tNCWL
tCSR
tCHR
tRPC
tCPT
Nibble Mode WRITE Command to CAS
Lead Time
CAS Set-Up Time (CAS'before RAS)
CAS Hold Time (CAS before RAS)
RAS Precharge to CAS Active Time
CAS Precharge Time (CAS before
RAS Counter Test)
20 ,
-
10
30
0
-
-
-
-
40 -
25 -
10 -
30 -
0-
50 -
30 - ns
10 - ns
30 - ns
0 - ns .-
60 - ns
..-
CAPACITANCE (Vcc=5V±10%, f=lMHz, Ta=O'V 70 D C)
SYMBOL
CIl
CI2
PARAMETER
Input Capacitance (Ao 'V AS , DIN)
Input Capacitance (RAS, CAS, WRITE)
Co Output Capacitance (DOUT)
MIN. MAX. UNITS
- 5 pF
- 7 pF
- 7 pF
- A-54 -

4페이지










TMM41257AZ-10 전자부품, 판매, 대치품
TMM41257AP/AT/AZ-l 0, TMM41257AP/AT/AZ-12
TMM41257AP/AT/AZ-15
READ-HRITE/READ-MODIFY-VJRITE CYCLE
VIH
CAS
VIL
VIH
AO-AS
VIL
WRITE
VIH
VIL
DOUT
VOH
VOL
VIH
DIN
VIL
f2Zl Don't care
- A-57 -

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관련 데이터시트

부품번호상세설명 및 기능제조사
TMM41257AZ-10

N-channel dynamic RAM

Toshiba
Toshiba
TMM41257AZ-12

N-channel dynamic RAM

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Toshiba

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