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TC511000J-85 데이터시트 PDF




Toshiba에서 제조한 전자 부품 TC511000J-85은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 TC511000J-85 기능
기능 DRAM
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TC511000J-85 데이터시트, 핀배열, 회로
TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 1 BIT DYNAMIC RAM
SILICON GATE CMOS
DESCRIPTION
TC511000P/J/Z-85, TC511000P/J/Z-l0
TC511000P/J/Z-12
The TC5llOOOP/J/Z is the ne~v generation dynamic RAN organized 1,048,576 words by 1 bit.
The TC5llOOOP/J/Z utilizes TOSHIBA's CHOS Silicon gate process technology as well as ad-
vanced circuit techniques to provide wide operating margins, both internally and to the
system user. Multiplexed address inputs permit the TC5llOOOP/J/Z to be packaged in a
standard 18 pin plastic DIP, 26/20 pin plastic SOJ and 20/19 pin plastic ZIP. The package
size provides high system bit densities and is compatible with widely available automated
testing and insertion equipment. System oriented features include single power supply of
5V±10% tolerance" direct interfacing capability with high performance logic families such
as Schottky TTL. IJTest Mode" function is implemented from Ilevision C.
FEATURES
• 1,048,576 words by 1 bit organization
• Fast access time and cycle time
TC5llOOOP/J/Z-85-10-l2
tRAC HAS Access Time
tM
Column Address
Access Time
85ns
45ns
lOOns l20ns
Sans 60ns
tCAC CAS Access Time
t RC Cycle Time
tpc
Fast Page Hade
Cycle Time
25ns
l65ns
SOns
25ns 30ns
190ns 220ns
55ns 70ns
• Single pOvler supply of 5V±10% ~vith a built-
in VEE generator
PIN COmlE:TICN (TOP VIEt-l)
• Low Power
3n5m~J HAX. Operating (TC5ll000P / J /Z-85)
330mtoJ UP.X. Operating(TC5ll000P/J/Z-10)
275mW MAX. Operating(TC5ll000P/J/Z-12)
5.5mtJ HA.,{. Standby
• Output unlatched at cycle end allows
tHo-dimensional chip selection
• Common I/O capability using "EARLY WRITE"
operation
• Read-Modify-Hrite, CAS before HAS refrl::'~~'J I
RAS-only refresh, Hidden refresh, Fast
Page Mode and Test Mode capability
• All inputs and output TTL compatible
• 512 refresh cycles/8ms
• Package Plastic DIP: TC5ll000P
Plastic SOJ: TC5ll000J
Plastic ZIP: TC5ll000Z
Plastic DIP
Plastic SOJ Plastic ZIP
DIU
~
ID:S
11"
AO
1
A2
A3
Vss
DOU1
~
A9
A8
A7
All
A5
a4.
~
roili
TF
N.C.
AO
Al
A2
A3
VCC
PHI rlN·1ES
AD '" A9
m
DIN
DOUT
CAS
WRITE
Vec
VSS
TF
N.C.
Address Inputs
Row Address Strobe
Data In
Data Out
Column Address Strobe
Read/Write Input
Power (+5V)
Ground
Test Function
No Connection
Vss
~1
N.C.
A9
A8
A7
A6
A5
A4.
BLOCK DIAGRAf.1
Al
A3 AO
M, Al
AS A2
A8 A3
A4.
AS
AS
A7
AS
A9
GUDGTRATE DIAG -Q Vee
L-0_E_N_E_RA_T_O_R_ - - - ' --0 V S8
- A-85 -




TC511000J-85 pdf, 반도체, 판매, 대치품
TC511000P/ J/Z-85, TC511 OOOP/ J/Z-l 0
TC511000P/ J/Z-12
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Continued)
SYMBOL
PARAMETER
tWCH
tWCR
twp
tRWL
tCWL
t DS
tDH
..... tDHR
tREF
twcs
I tCWD
tRWD
\ tAWD
("
tCSR
tCHR
tRPC
tCPT
tCPN
t TES
tTEH
Write Command Hold,Time
Write Command Hold Time
referenced to RAS
Write Command Pulse Width
Write Corrnnand to RAS 'Lead
Time
Write Command ~o CAS Lead
Time
Data Set-Up Time
Data Hold Time
Data Hold Time referenced
to RAS
Refresh Period
Write Command Set-Up Time
CAS to WRITE Delay Time
RAS to WRITE Delay Time
Column Address to WRITE
Delay Time
CAS Set-Up Time (CAS before'
RAS Cycle)
CAS Hold Time (CAS before
RAS Cycle)
RAS to CAS Precharge Time
CAS Precharge Time (CAS be-
fore RAS Counter Test Cycle)
CAS Precharge Time
Test Mode Enable Set-Up Time
referenced to RAS
Test Hode Enable Hold Time
referenced to RAS
TC511000P~J~Z-85 TC511000P~.r~Z-lO TC511000P~J~Z-12
UNITS NOTES
MIN. MAX. MIN. MAX. MIN. MAX.
20 -
20 - 25 - ns
65 -
20 -
-75 90 - ns
-20 25 - ns
20 -
- -25 30 ns
20 -
- -25 30 ns
0-
20 -
0-
0 - ns 11
-20 25 - ns 11
65 -
-8
75 - 90 - ns I
-8
- 8 ms I
0-
0-
-0 ns 12--....
25 -
25 - 30 - ns 12
-.-
I85 - 100 - 120 - ns 12
45 -
50 - 60 - ns 12
--
10 -
10 - 10 - ns
30 -
0-
50 -
15 -
0-
-30 - 30
ns
0-
0 - ns
50 - 60 - ns
-15 20 - ns
0-
0 - ns
0-
0 - , 0 - ns
- A-88 -

4페이지










TC511000J-85 전자부품, 판매, 대치품
WRITE CYCLE (EARLY WRITE)
TC511000P/J/Z-85, TC511000P/J/Z-l0
TC511000P/J/Z-12
AO-A9
COLUMN
tC'l1L
VIH -
~
~-r-r-r-r-l-r-r-r-r-r-r-l-r-r"'l""7"\
~~--~----------~
tDS I
tDH
::: =l$!l///e/$!I/~R VALID DATA ]<1$11;1//$///////////0
VOH - _ _ _ _ _ _ _ _ _ _ _ _ _ __
VOL -
I
OP:SN
~: "H"or"L"
NOTE: "TF" pin should be connected to VIL level or open, if "Test
Mode" is not used.
- A-91 -

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부품번호상세설명 및 기능제조사
TC511000J-85

DRAM

Toshiba
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