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FDH055N15A PDF 데이터시트 ( Data , Function )

부품번호 FDH055N15A 기능
기능 MOSFET
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FDH055N15A 데이터시트, 핀배열, 회로
March 2015
FDH055N15A
N-Channel PowerTrench® MOSFET
150 V, 167 A, 5.9 mΩ
Features
• RDS(on) = 4.8 mΩ (Typ.) @ VGS = 10 V, ID = 120 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Synchronous Rectification for ATX / Sever / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter
G
D
S
TO-247
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
- DC
- AC
(f > 1 Hz)
Drain Current
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
Drain Current
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDH055N15A
150
±20
±30
167*
118
156
668
835
6.0
429
2.86
-55 to +175
300
*Calculated continuous current based on maximum allowable junction temperature, Package limitation current is 156 A.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDH055N15A
0.35
40
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDH055N15A Rev. C3
1
www.fairchildsemi.com




FDH055N15A pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.15
1.10
1.05
1.00
0.95
0.90
-100
*Notes:
1. VGS = 0V
2. ID = 250μA
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
1000
100
10μs
100μs
10
Operation in This Area
1 is Limited by R DS(on)
1ms
10ms
DC
0.1
0.01
1
*Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
10 100
VDS, Drain-Source Voltage [V]
200
Figure 11. Eoss vs. Drain to Source Voltage
8
Figure 8. On-Resistance Variation
vs. Temperature
2.8
2.4
2.0
1.6
1.2
0.8
0.4
-100
*Notes:
1. VGS = 10V
2. ID = 120A
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
180
135
VGS= 10V
90
Limited by package
45
RθJC = 0.35oC/W
0
25 50 75 100 125
TC, Case Temperature [oC]
150
175
6
4
2
0
0 30 60 90 120 150
VDS, Drain to Source Voltage [V]
©2011 Fairchild Semiconductor Corporation
FDH055N15A Rev. C3
4
www.fairchildsemi.com

4페이지










FDH055N15A 전자부품, 판매, 대치품
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDH055N15A Rev. C3
7
www.fairchildsemi.com

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