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FCH130N60 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FCH130N60은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 FCH130N60 기능
기능 MOSFET ( Transistor )
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FCH130N60 데이터시트, 핀배열, 회로
July 2014
FCH130N60
N-Channel SuperFET® II MOSFET
600 V, 28 A, 130 m
Features
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 112 m
• Ultra Low Gate Charge (Typ. Qg = 54 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Telecom / Sever Power Supplies
• Industrial Power Supplies
• AC-DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This advanced technology
is tailored to minimize conduction loss, provide superior
switching performance, and withstand extreme dv/dt rate and
higher avalanche energy. Consequently, SuperFET II MOSFET
is suitable for various AC/DC power conversion for system
miniaturization and higher efficiency.
D
G
G
D
S
TO-247
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
 (Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCH130N60 Rev. C2
1
FCH130N60
600
±20
±30
28
18
84
720
6
2.78
100
20
278
2.2
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCH130N60
0.45
40
Unit
oC/W
www.fairchildsemi.com




FCH130N60 pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
*Notes:
1. VGS = 0V
2. ID = 10mA
1.1
Figure 8. On-Resistance Variation
vs. Temperature
2.5
*Notes:
1. VGS = 10V
2. ID = 14A
2.0
1.0 1.5
0.9 1.0
0.8
-100
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
200
100 10s
100s
10
1ms
Operation in This Area
is Limited by R DS(on)
1 *Notes:
DC
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.1
1
10 100
VDS, Drain-Source Voltage [V]
1000
Figure 11. Eoss vs. Drain to Source Voltage
15
12
9
6
3
0
0 120 240 360 480 600
VDS, Drain to Source Voltage [V]
©2014 Fairchild Semiconductor Corporation
FCH130N60 Rev. C2
4
0.5
-100
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
35
28
21
14
7
0
25 50 75 100 125 150
TC, Case Temperature [oC]
www.fairchildsemi.com

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FCH130N60 전자부품, 판매, 대치품
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --GG--aa--tt-ee--P-P-u-u-ll-ss-ee---PW--e-i-dr-ito-h-d-
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2014 Fairchild Semiconductor Corporation
FCH130N60 Rev. C2
7
www.fairchildsemi.com

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부품번호상세설명 및 기능제조사
FCH130N60

MOSFET ( Transistor )

Fairchild Semiconductor
Fairchild Semiconductor

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