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FCH077N65F 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FCH077N65F은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 FCH077N65F 기능
기능 MOSFET ( Transistor )
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FCH077N65F 데이터시트, 핀배열, 회로
December 2014
FCH077N65F
N-Channel SuperFET® II FRFET® MOSFET
650 V, 54 A, 77 mΩ
Features
• 700 V @ TJ = 150°C
• Typ. RDS(on) = 68 mΩ
• Ultra Low Gate Charge (Typ. Qg = 126 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 693 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• LCD / LED / PDP TV • Telecom / Server Power Supplies
• Solar Inverter
• AC - DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications. SuperFET
II FRFET® MOSFET’s optimized body diode reverse recovery
performance can remove additional component and improve
system reliability.
D
G
G DS
TO-247
long leads
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCH077N65F Rev. C2
1
S
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FCH077N65F_F155
650
±20
±30
54
32
162
1128
11
4.81
100
50
481
3.85
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCH077N65F_F155
0.26
40
Unit
oC/W
www.fairchildsemi.com




FCH077N65F pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
*Notes:
1. VGS = 0V
2. ID = 10mA
1.1
Figure 8. On-Resistance Variation
vs. Temperature
2.5
*Notes:
1. VGS = 10V
2. ID = 27A
2.0
1.0 1.5
0.9 1.0
0.8
-100
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
200
10μs
100
100μs
10 1ms
DC
Operation in This Area
1
is Limited by R DS(on)
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.1 1
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 11. Eoss vs. Drain to Source Voltage
30
24
18
12
6
0
0 130 260 390 520 650
VDS, Drain to Source Voltage [V]
©2014 Fairchild Semiconductor Corporation
FCH077N65F Rev. C2
0.5
-100
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
60
48
36
24
12
0
25 50 75 100 125 150
TC, Case Temperature [oC]
4 www.fairchildsemi.com

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FCH077N65F 전자부품, 판매, 대치품
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2014 Fairchild Semiconductor Corporation
FCH077N65F Rev. C2
7
www.fairchildsemi.com

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