|
|
|
부품번호 | FGP5N60UFD 기능 |
|
|
기능 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 11 페이지수
FGP5N60UFD
600V, 5A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =1.9V @ IC = 5A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating, UPS, SMPS, PFS
October 2008
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Induction
Heating, UPS, SMPS, and PFC applications where low conduc-
tion and switching losses are essential.
C
1 TO-220
1.Gate 2.Collector 3.Emitter
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. juntion temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
E
Ratings
600
± 20
10
5
15
81
32
-55 to +150
-55 to +150
300
Typ.
-
-
-
Max.
1.55
3.2
62.5
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FGP5N60UFD Rev. A
1
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
15
TC = 25oC
20V
15V
12V
10
10V
5
VGE = 8V
0
02468
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
15
Common Emitter
VGE = 15V
TC = 25oC
10 TC = 125oC
10
Figure 2. Typical Output Characteristics
15
TC = 125oC
20V
15V
12V
10
10V
5
VGE = 8V
0
02468
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer Characteristics
10
20
Common Emitter
VCE = 20V
10
TC = 25oC
TC = 125oC
5
0
01234
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.0
Common Emitter
VGE = 15V
2.5
10A
2.0
5A
1.5
IC = 2.5A
1.0
25 50 75 100 125
Collector-EmitterCase Temperature, TC [oC]
1
6 8 10 12
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
20
Common Emitter
TC = -40oC
16
12
8
10A
4
5A
IC = 2.5A
0
0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
FGP5N60UFD Rev. A
4
www.fairchildsemi.com
4페이지 Typical Performance Characteristics
Figure 19. Forward Characteristist
15
10
TJ = 125oC
TJ = 25oC
1
TJ = 75oC
0.1
0
12
Forward Voltage, VF [V]
15
Figure 21. Reverse Recovery Current
2.5
2.0
200A/µs
1.5
1.0 di/dt = 100A/µs
0.5
0.0
2
468
Forward Current, IF [A]
Figure 23. Reverse Recovery Time
50
10
40
200A/µs
30
di/dt = 100A/µs
20
10
0
2 4 6 8 10
Forward Current, IF [A]
Figure 20. Reverse Current
100
TC = 125oC
10
1 TC = 75oC
0.1
0.01
0
TC = 25oC
200 400
Reverse Voltage, VR [V]
Figure 22. Stored Charge
50
40
30 200A/µs
20
di/dt = 100A/µs
10
0
2468
Forward Current, IF [A]
600
10
FGP5N60UFD Rev. A
7
www.fairchildsemi.com
7페이지 | |||
구 성 | 총 11 페이지수 | ||
다운로드 | [ FGP5N60UFD.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FGP5N60UFD | IGBT ( Insulated Gate Bipolar Transistor ) | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |