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부품번호 | FGH30N60LSD 기능 |
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기능 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 10 페이지수
FGH30N60LSD
600 V, 30 A PT IGBT
Features
• Low Saturation Voltage: VCE(sat) = 1.1 V @ IC = 30 A
• High Input Impedance
• Low Conduction Loss
Applications
• Solar Inverter, UPS
November 2013
General Description
Using Fairchild's advanced PT technology, the FGA30N60LSD
IGBT offers superior conduction performances, which offer the
optimum performance for medium switching application such as
solar inverter, UPS applications where low conduction losses
are the most important factor.
G
CE
TO-247
Absolute Maximum Ratings
Symbol
Description
VCES
VGES
IC
ICM (1)
IFSM
PD
TJ
Tstg
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25C
@ TC = 100C
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25C
@ TC = 100C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
C
G
E
Ratings
600
20
60
30
90
150
480
192
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
W
W
C
C
C
Typ.
--
--
--
Max.
0.26
0.92
40
Unit
C/W
C/W
C/W
©2007 Fairchild Semiconductor Corporation
FGH30N60LSD Rev. C1
1
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1.Typical Output Characteristics
90
TC = 25oC
60
VGE = 20V
15V
12V
10V
8V
Figure 2. Typical Saturation Voltage
Characteristics
90
TC = 125oC
60
VGE = 20V
15V
12V
10V
8V
30 30
0
0123
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteritics
4
90
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
60
0
0123
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer characteristics
4
90
Common Emitter
VCE = 20V
TC = 25oC
TC = 125oC
60
30 30
0
0123
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
1.4
Common Emitter
VGE = 15V
60A
1.2
1.0 30A
IC = 15A
0.8
0.6
25
50 75 100
Case Temperature, TC [oC]
125
0
0 2 4 6 8 10 12
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. Vge
20
Common Emitter
16
T
C
=
25oC
12
8
4 60A
30A
IC = 15A
0
0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
©2007 Fairchild Semiconductor Corporation
FGH30N60LSD Rev. C1
4
www.fairchildsemi.com
4페이지 Figure 19. Transient Thermal Impedance of IGBT
1
0.5
0.1
0.2
0.1
0.01
0.05
0.02
0.01
1E-3
1E-5
single pulse
1E-4
Figure 20. Forward Characteristics
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
1
10
Figure 21. Reverse Current
100
10
T =125oC
C
1 T =75oC
C
T =25oC
C
0.1
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
FORWARD VOLTAGE, V [V]
F
1E-4
1E-5
1E-6
1E-7
1E-8
1E-9
0
T = 125oC
C
T = 75oC
C
T = 25oC
C
100 200 300 400 500
REVERSE VOLTAGE, V [V]
R
600
Figure 22. Reverse Recovery Time
200
190
180
170
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
100
I = 15A
F
T = 125oC
C
T = 75oC
C
T = 25oC
C
200
diF/dt [A/s]
300
400 500
©2007 Fairchild Semiconductor Corporation
FGH30N60LSD Rev. C1
7
www.fairchildsemi.com
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부품번호 | 상세설명 및 기능 | 제조사 |
FGH30N60LSD | IGBT ( Insulated Gate Bipolar Transistor ) | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |