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Datasheet FGY75N60SMD Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FGY75N60SMD | IGBT, Insulated Gate Bipolar Transistor FGY75N60SMD — 600 V, 75 A Field Stop IGBT
FGY75N60SMD
600 V, 75 A Field Stop IGBT
Features
• High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 75 A • High Input Impedance • Fast Switching : EOFF = 10 uJ/A • RoHS Compliant
June 2014
General Description
Using nove |  Fairchild Semiconductor | igbt |
FGY Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FGY75N60SMD | IGBT, Insulated Gate Bipolar Transistor FGY75N60SMD — 600 V, 75 A Field Stop IGBT
FGY75N60SMD
600 V, 75 A Field Stop IGBT
Features
• High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 75 A • High Input Impedance • Fast Switching : EOFF = 10 uJ/A • RoHS Compliant
June 2014
General Description
Using nove Fairchild Semiconductor igbt | |
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