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PDF FGH30T65UPDT Data sheet ( Hoja de datos )
| Número de pieza | FGH30T65UPDT | |
| Descripción | IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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November 2013
FGH30T65UPDT
650V, 30A Field Stop Trench IGBT
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.65 V (Typ.) @ IC = 30 A
• 100% of Parts Tested ILM(2)
• High Input Impedance
• Tightened Parameter Distribution
• RoHS Compliant
• Short Circuit Ruggedness > 5 us @ 25oC
E
C
G
General Description
Using novel field stop trench IGBT technology, Fairchild’s new
series of field stop trench IGBTs offer the optimum performance
for solar inverter , UPS and digital power generator where low
conduction and switching losses are essential.
Applications
• Solar Inverter, UPS, Digital Power Generator
C
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
Description
VCES
VGES
IC
ICM(1)
ILM(2)
IF
IFM(1)
PD
SCWT
TJ
Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
Clamped Inductive Load Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Short Circuit Withstand Time
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
2: IC = 90 A, VCC = 400 V, Rg = 20 Ω
Thermal Characteristics
Symbol
Parameter
RθJC(IGBT)
RθJC(Diode)
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2013 Fairchild Semiconductor Corporation
FGH30T65UPDT Rev. C1
1
G
E
Ratings
650
± 20
± 25
60
30
90
90
60
30
150
250
125
5
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
A
W
W
us
oC
oC
oC
Typ.
-
-
-
Max.
0.60
1.2
40
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 7. Capacitance Characteristic
10000
Cies
1000
Coes
100
Common Emitter
VGE = 0 V, f = 1 MHz
Cres
TC = 25oC
10
1 10
Collector-Emitter Voltage, VCE [V]
Figure 9. Turn-on Characteristics vs.
Gate Resistance
500
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 30 A
TC = 25oC
TC = 175oC
100
td(on)
tr
Figure 8. Gate charge Characteristics
15
12
200 V
400 V
VCC = 300 V
9
6
3
Common Emitter
TC = 25oC
0
30 0 40 80 120
Gate Charge, Qg [nC]
Figure 10. Turn-off Characteristics vs.
Gate Resistance
5000
1000
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 30 A
TC = 25oC
TC = 175oC
td(off)
160
100 tf
10
0 10 20 30 40
Gate Resistance, RG [Ω]
Figure 11. Switching Loss vs.
Gate Resistance
30
Common Emitter
VCC = 400 V, VGE = 15 V
10 IC = 30 A
TC = 25oC
TC = 175oC
Eon
1
Eoff
50
0.1
0
10 20 30 40
Gate Resistance, RG [Ω]
50
10
0 10 20 30 40
Gate Resistance, RG [Ω]
Figure 12. Turn-on Characteristics vs.
Collector Current
500
50
100
10
1
0
tr
td(on)
Common Emitter
VGE = 15 V, RG = 8 Ω, VCC = 400 V
TC = 25oC
, TC = 175oC
15 30 45
Collector Current, IC [A]
60
©2013 Fairchild Semiconductor Corporation
FGH30T65UPDT Rev. C1
5
www.fairchildsemi.com
5 Page | ||
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